급속 열처리 방법에 의한 Sn 솔더 범프의 리플로와 금속간 화합물 형성
Reflow of Sn solder bumps using Rapid Thermal Annealing (RTA) method and intermetallic formation
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초록
본 실험에서는 두 가지 리플로 시스템에 따라 솔더 범프 내에 생성되는 금속간 화합물의 성장 거동에 대하여 연구하였다. 산화막이 증착된 Si 기판 위에 직류 마그네트론 스퍼터링을 이용하여 Ti (50 nm), Cu (1 μm), Au (50 nm), Ti (50 nm)의 박막을 형성한 후, 전해 도금을 이용하여 5 μm 두께의 Cu 범 프와 20 μm 두께의 Sn 범프를 형성하였다. 급속열처리장치(RTA)와 일반 리플로를 이용하여 전해 도금 으로 형성된 Sn (20 μm)/ Cu (5 μm) 범프를 동일한 온도에서 각각 리플로 공정을 진행한 결과, 급속열처 리장치를 이용하여 리플로를 할 때, 플럭스를 사용하지 않고 범프로 형성할 수 있었으며, 솔더 계면에 형 성된 금속간 화합물이 일반 리플로의 경우보다 더 얇게 형성되었다.
Abstract
We studied a growth behavior of Intermetallic compounds (IMCs) during solder bumping with two reflow methods. Ti (50 nm), Cu (1 μm), Au (50 nm) and Ti (50 nm) thin films were deposited on SiO2/Si wafer using the DC magnetron sputtering system as the under bump metallization (UBM). And the 5 μm thick Cu bumps and 20 μm thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.
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