Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive Sputtering
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Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the O2 fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Xray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of Cu2+. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of 3.8×103. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials.
Abstract
Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the O2 fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Xray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of Cu2+. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of 3.8×103. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials.
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