Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films
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An electric field was applied to a Mo conductive layer in the sandwiched structure of glass/SiO2/Mo/SiO2/ a-Si to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the 2nd generation glass substrate.
Abstract
An electric field was applied to a Mo conductive layer in the sandwiched structure of glass/SiO2/Mo/SiO2/ a-Si to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the 2nd generation glass substrate.
참고문헌 (8)
- 공수철, "ITO", PEDOT:PSS, Al 구조의 고분자 유기 발광다이오드의 특성 연구, pp.마이크로전자 및 패키징학회지, 2005[DOI]
- A. T. Voutsas, "Structure of As-Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures", J. Electrochem. Soc, 139, pp.2659~ (1992)
- R. S. Wagner, "Vapor-Liquid-Solid mechanism of single crystal growth", Appl. Phys. Lett, 4, pp.89~ (1964)
- S.-W. Lee, "Low temperature poly-Si thin film transistor fabrication by metal induced lateral crystallization", IEEE Electron Dev. Lett, 17, pp.160~ (1996)
- J. S. Im, "Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films", Appl. Phys. Lett, 63, pp.2969~ (1993)
- J.-S. Ro, "Millisecond Crystallization of amorphous silicon film using Joule heating", SID 2006 Digest of Technical Papers, pp.1280~ (2006)
- W. E. Hong, "Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer", Thin Solid Films, 515, pp.5357~ (2007)
- 이광용, "전기도금법으로 제조한 Ni 박막의 전기비저항 및 솔더 반응성", 마이크로전자 및 패키징학회지, 12(3), pp.253~258 (2005), 한국마이크로전자및패키징학회