논문KCI 등재
Crystallization of amorphous silicon films below 450oC by FALC
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관련 논문AI추천
Crystallization behavior of FALC processed a-Si at various electric field intensities강선미, 김상진, 김영배, 정용재, 최덕균청정에너지연구소 · Journal of Ceramic Processing Research2004 · 제5권 제1호Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films고다영, 노재상한국마이크로전자및패키징학회 · 마이크로전자 및 패키징학회지2018 · 제25권 제4호Crystallization of Amorphous Silicon Films Using Joule Heating노재상한국표면공학회 · 한국표면공학회지2014 · 제47권 제1호Optimization of p+ seeding layer for thin film silicon solar cell by liquid phase epitaxy이수홍, 이은주한국결정성장학회 · 한국결정성장학회지2005 · 제15권 제6호Structural modifications of SiOx/DLC films by thermal annealingKeun Ho Auh, Koichi Niihara, Won Jae Yang청정에너지연구소 · Journal of Ceramic Processing Research2004 · 제5권 제3호Interfacial Electrical/Dielectric Characterization in Low TemperaturePolycrystalline Si황진하한국마이크로전자및패키징학회 · 마이크로전자 및 패키징학회지2005 · 제12권 제1호
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