고출력 LED 패키지의 Thermal Via 형성을 위한 Si 기판의 이방성 습식식각 공정
Anisotropic Wet-Etching Process of Si Substrate for Formation of Thermal Vias in High-Power LED Packages
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초록
습식공정으로 thermal via용 SI 관통 via를 형성하기 위해 TMAH 용액의 농도와 온도에 따른 Si 기판의 이방성습식식각 거동을 분석하였다. TMAH 용액의 온도를 80oC로 유지한 경우, 5 wt%, 10 wt% 및 25 wt% 농도의 TMAH 용액은각기 0.76 μm/min, 0.75 μm/min 및 0.30 μm/min의 Si 식각속도를 나타내었다. 10 wt% TMAH 용액의 온도를 20oC와 50oC 로 유지시에는 각기 0.07 μm/min와 0.23 μm/min으로 식각속도가 저하하였다. Si 기판의 양면에 동일한 형태의 식각 패턴을형성하여 80oC의 10 wt% TMAH 용액에 장입하고 5시간 식각하여 깊이 500 μm의 관통 via hole을 형성하였다.
Abstract
In order to fabricate through-Si-vias for thermal vias by using wet etching process, anisotropic etching behavior of Si substrate was investigated as functions of concentration and temperature of TMAH solution in this study. The etching rate of 5 wt%, 10 wt%, and 25 wt% TMAH solutions, of which temperature was maintained at 80oC, was 0.76 μm/min, 0.75 μm/min, and 0.30 μm/min, respectively. With changing the temperature of 10 wt% TMAH solution to 20oC and 50oC, the etching rate was reduced to 0.067 μm/min and 0.233 μm/min, respectively. Through-Si-vias of 500 μm-depth could be fabricated by etching a Si substrate for 5 hours in 10 wt% TMAH solution at 80oC after forming same via-pattern on each side of the Si substrate.
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