신축성 전자패키징용 강성도 국부변환 polydimethylsiloxane 기판의 탄성계수
Elastic Modulus of Locally Stiffness-variant Polydimethylsiloxane Substrates for Stretchable Electronic Packaging Applications
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초록
신축성 전자패키징에 응용하기 위해 강성도가 서로 다른 polydimethylsiloxane 탄성고분자인 Sylgard 184와Dragon Skin 10을 사용하여 섬(island) 구조가 삽입된 강성도 국부변환 신축성 기판을 형성한 후, 강성도 국부변환부의폭에 따른 기판의 탄성계수를 분석하였다. 기판 기지로는 탄성계수가 0.09 MPa인 Dragon Skin 10을 사용하였으며, 기판기지 내에 삽입되는 강성도 국부변환부는 탄성계수가 2.15 MPa인 Sylgard 184로 형성하였다. 신축성 기판의 형상은 길이 6.5 cm, 두께 0.4 cm, 폭 2.5 cm이었으며, 중앙부에 길이 4 cm, 두께 0.2 cm, 폭 0.5~1.5 cm인 강성도 국부변환부를삽입하였다. 폭 0.5 cm의 Sylgard 184를 Dragon Skin 10에 삽입함에 따라 기판의 탄성계수가 0.09 MPa에서 0.16 MPa 로 증가하였다. Sylgard 184의 폭을 1.0 cm 및 1.5 cm으로 증가시킴에 따라 기판의 탄성계수가 0.18 MPa와 0.2 MPa로증가하였으며, Sylgard 184 강성도 국부변환부의 폭에 따른 기판 탄성계수의 변화는 등변형률의 Voigt 구조와 등응력의Reuss 구조를 조합하여 예측한 값과 잘 일치하였다.
Abstract
In order to apply to stretchable electronics packaging, locally stiffness-variant stretchable substrates consisting of island structure were fabricated by combining two polydimethylsiloxane elastomers of different stiffnesses and their elastic moduli were characterized as a function of the width of the high-stiffness island. The low-stiffness substrate matrix and the embedded high-stiffness island of the stretchable substrate were formed by using Dragon Skin 10 of the elastic modulus of 0.09 MPa and Sylgard 184 of the elastic modulus of 2.15 MPa, respectively. A stretchable substrate was fabricated to be a configuration of 6.5-cm length, 0.4-cm thickness, and 2.5-cm width, in which a high-stiffness Sylgard 184 island, of 4-cm length, 0.2-cm thickness, and 0.5~1.5-cm width, was embedded. The elastic modulus of a stretchable substrate was increased from 0.09 MPa to 0.16 MPa by incorporating the Sylgard 184 island of 0.5-cm width to Dragon Skin 10 substrate matrix. The elastic modulus was further improved to 0.18 MPa and 0.2 MPa with increasing the Sylgard 184 island width to 1.0 cm and 1.5 cm, which were in good agreement with values estimated by combining the Voigt structure of isostrain and the Reuss structure of isostress.
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