Assessment Methodology of Junction Temperature of Light-Emitting Diodes (LEDs)
0
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.
Abstract
High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.
참고문헌 (13)
- M. R. Krames, "Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting", J. Display Technol, 3(2), pp.160~ (2007)
- D. A. Steigerwald, "Illumination with Solid State Lighting Technology", IEEE J. Sel. Topics Quantum Electron, 8(2), pp.310~ (2002)
- F. M. Steranka, "High Power LEDs-Technology Status and Market Applications", Phys. Status Solidi A, 194(2), pp.380~ (2002)
- Y. Aoyama, "An LED Module Array System Designed for Streetlight Use", Energy 2030 Conference, 2008. Energy 2008, pp.1~ (2008), IEEE
- R. Vittori, "New Solid State Technologies and Light Emission diodes as a Mean of Control and Lighting Source Applicable to Explosion Proof Equipment, With the Scope to Reduce Maintenance, to Limit the Risk of Bad Maintenance and to Expand the Plants’ Life", PCIC Europe, 2009. PCIC EUROPE’09. Conference Record, pp.193~ (2009)
- 박준범, "Via-hole 구조의 n-접합을 갖는 수직형 발광 다이오드 전극 설계에 관한 연구", 마이크로전자 및 패키징학회지, 22(4), pp.71~76 (2015), 한국마이크로전자및패키징학회
- 이태영, "TiO2 나노입자가 혼합된 봉지재를 적용한 LED 패키지의 광효율 특성 평가", 마이크로전자 및 패키징학회지, 21(3), pp.31~35 (2014), 한국마이크로전자및패키징학회[DOI]
- 김우정, "고전력 LED용 적층형 LTCC 패키징의 ZnO 조성 변화가 방열 특성에 미치는 영향", 마이크로전자 및 패키징학회지, 19(4), pp.79~83 (2012), 한국마이크로전자및패키징학회[DOI]
- J. Liu, "Temperature-Dependent Light-Emitting Characteristics of InGaN", GaN Diodes, 2009, pp.49(1), 38~
- S. Chhajed, "Junction Temperature in Light-Emitting Diodes Assessed by Different Methods", Proc. SPIE, 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, pp.16~ (2005)
- J. Chonko, "Using Forward Voltage to Measure Semiconductor Junction Temperature", pp.2681~ (2006), Keithley Instruments, Inc
- Y. Xi, "Junction-temperature Measurement in GaN Ultraviolet Light-emitting Diodes Using Diode Forward Voltage Method", Appl. Phys. Lett, 85(12), pp.2163~ (2004)
- F. Jiang, "Research on the Junction-temperature Characteristic of GaN Light-emitting Diodes on Si Substrate", J. Lumin, 122-123, pp.693~ (2007)
