차세대 전력반도체 소자 및 패키지 접합 기술
Recent Overview on Power Semiconductor Devices and Package Module Technology
2
조회
0
다운로드
4
인용
0
참고문헌
키워드
초록
In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and Ga2O3 have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.
Abstract
In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and Ga2O3 have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.
참고문헌 (39)
- N. Dharmarasu, "AlGaN", GaN HEMT grown on SiC with carbon doped GaN buffer by MOCVD, 2019, 434~
- S. S. Moosavi, "A comparison of various open-circuit fault detection methods in the IGBTbased DC", AC inverter used in electric vehicle, 2019, pp.96, 223~
- X. Liang, "A 12.47 kV Medium Voltage Input 350 kW EV Fast Charger using 10 kV SiC MOSFET", 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), pp.581~ (2019)
- 윤정원, "전기자동차용 고신뢰성 파워모듈 패키징 기술", 마이크로전자 및 패키징학회지, 21(4), pp.1~13 (2014), 한국마이크로전자및패키징학회[DOI]
- P. Roussel, "SiC Market and Industry Update, International SiC Power", Electronics Applications Workshop (ISiCPEAW) (2011)
- K. Shenai, "Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices", ECS J. Solid State Science and Technology, 2(8), pp.3055~ (2013)
- F. Roccaforte, "Critical issues for interfaces to p-type SiC and GaN in power devices", Applied Surface Science, 258(21), pp.8324~ (2012)
- J. Millan, "A survey of wide bandgap power semiconductor devices", IEEE Transactions on Power Electronics, 29(5), pp.2155~ (2014)
- S. J. Pearton, "A review of Ga2O3 materials, processing, and device", Applied Physics Reviews, 5(1), pp.011301~ (2018)
- D. J. Spry, "Prolonged 500oC demonstration of 4HSiC JFET ICs with two-level interconnect", IEEE Electron Device Letters, 37(5), pp.625~ (2016)
- T. P. Chow, "Wide bandgap semiconductor power devices for energy efficient systems", Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp.402~ (2015)
- S. Dimitrijev, "Advances in SiC power MOSFET technology", Microelectronics Reliability, 43(2), pp.225~ (2003)
- F. Zimmermann, "Green coloring of GaN single crystals introduced by Cr impurity", J. Luminescence, 207, pp.507~ (2019)
- T. Kimura, "Self-assembled single-crystalline GaN having a bimodal meso", macropore structure to enhance photoabsorption and photocatalytic reactions, 2019, pp.11(4), 4233~
- S. S. Kang, "Advanced cooling for power electronics", IEEE International conference on integrated power electronics systems (CIPS), pp.1~ (2012)
- 노명훈, "전력반도체 패키징을 위한 Transient liquid phase 접합 기술", 마이크로전자 및 패키징학회지, 24(1), pp.27~34 (2017), 한국마이크로전자및패키징학회
- F. Ren, "Device processing and junction formation needs for ultra-high power Ga2O3 electronics", MRS Communications, 9(1), pp.77~ (2019)
- J. Yang, "Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers", ECS Journal of Solid State Science and Technology, 8(7), pp.3159~ (2019)
- J. K. Mun, "2. 32kV Breakdown voltage lateral β-Ga2O3 MOSFETs with source-connected field plate", ECS Journal of Solid State Science and Technology, 8(7), pp.3079~ (2019)
- K. Chu, "A comparative study of Cn", Sn, Sn, pp.Ni solder joints for low temperature stable transient liquid phase bonding, Scripta Materialia[DOI]
- H. Tatsumi, "Transient liquid phase sintering using Copper-Solder-Resin composite for high-temperature power modules", IEEE Electronic Components and Technology Conference (ECTC), pp.564~ (2018)
- H. Tatsumi, "Evolution of transient liquid-phase sintered Cu–Sn skeleton microstructure during thermal aging", Applied Sciences, 9(1), pp.157~ (2019)
- D. Mu, "Creep and mechanical properties of Cu6Sn5 and (Cu,Ni)6Sn5 at elevated temperatures", Journal of electronic materials, 42(2), pp.304~ (2013)
- H. Feng, "A transient liquid phase sintering bonding process using nickel-tin mixed powder for the new generation of high-temperature power devices", Journal of Electronic Materials, 46(7), pp.4152~ (2017)
- T. Ishizaki, "Thermal cycle reliability of Cu-nanoparticle joint", Microelectronics Reliability, 55(9-10), pp.1861~ (2015)
- M. Ali, "Microstructural evolution and characterisation of interfacial phases in Al2O3", Ag-Cu–Ti, Acta Materialia, pp.2015, 96[DOI]
- I. Krasniy, "Research of the DBC joining interface", International Forum on Strategic Technology (IFOST), pp.185~ (2016)
- A. Kar, "Ceramic-Metal Joining Using Active Filler Alloy-An In-Depth Electron Microscopic Study", The Transmission Electron Microscope, 317 (2012)
- J. H. Harris, "Sintered aluminum nitride ceramics for highpower electronic applications", Metals & Materials Society(TMS), 50(6), pp.56~ (1998)
- L. Sim, "Thermal characterization of Al2O3 and ZnO reinforced silicone rubber as thermal pads for heat dissipation purposes", Thermochimica acta, 430(1-2), pp.155~ (2005)
- X. Huang, "A review of dielectric polymer composites with high thermal conductivity", IEEE Electrical Insulation magazine, 27(4), pp.8~ (2011)
- Kiyoshi Hirao, "High Thermal Conductivity Silicon Nitride Ceramics", 한국세라믹학회지, 49(4), pp.380~384 (2012), 한국세라믹학회[DOI]
- Y. Wang, "Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles", Microelectronics Reliability, 54(9-10), pp.1911~ (2014)
- A. Uhlemann, "Investigation on AlCu clad base plates and a new by-pass cooler concept for pin fin power modules", International Conference on Integrated Power Electronics Systems (CIPS), pp.256~ (2014)
- C. Qian, "Thermal management on IGBT power electronic devices and modules", IEEE Access, 6, pp.12868~ (2018)
- 서일웅, "IGBT 전력반도체 모듈 패키지의 방열 기술", 마이크로전자 및 패키징학회지, 21(3), pp.7~17 (2014), 한국마이크로전자및패키징학회[DOI]
- J. P. Gwinn, "Performance and testing of thermal interface materials", Microelectronics Journal, 34(3), pp.215~ (2003)
- A. J. George, "Nonconchoidal Fracture in Power Electronics Substrates due to Delamination in Baseplate Solder Joints", IEEE Electronic System-Integration Technology Conference(ESTC), pp.1~ (2018)
- "Material Properties Charts" (2013)[URL]