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SiC based Technology for High Power Electronics and Packaging Applications

이순재|장영주|정재필|Ashutosh Sharma
한국마이크로전자및패키징학회 (The Microelectronics And Packaging Society)|2014.06|마이크로전자 및 패키징학회지 (Jornal of the Microelectronics and Packaging Society)|제20권 제2호|pp. 71-78|DOI http://dx.doi.org/10.6117/kmeps.2014.21.2.071

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키워드

SemiconductorPackagingIGBTSiCJFET
주제분류재료공학

초록

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-basedpower devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices forbetter performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. Newwide band gap materials such as SiC have now been introduced for high power applications. SiC power devices havebeen evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpartin terms of higher switching performance, higher voltages and higher power density. The recent progress in thedevelopment of high voltage power semiconductor devices is reviewed. Future trends in device development andindustrialization are also addressed.

Abstract

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-basedpower devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices forbetter performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. Newwide band gap materials such as SiC have now been introduced for high power applications. SiC power devices havebeen evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpartin terms of higher switching performance, higher voltages and higher power density. The recent progress in thedevelopment of high voltage power semiconductor devices is reviewed. Future trends in device development andindustrialization are also addressed.

참고문헌 (36)

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