전기자동차용 고신뢰성 파워모듈 패키징 기술
Power Module Packaging Technology with Extended Reliability for Electric Vehicle Applications
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The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologiesof power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importancein the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energyefficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the currentdensity increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meetthe quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si)leads to maximum operation temperatures of nearly 200oC. As a result new packaging technologies are needed to facethe demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) orgallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of powerelectronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermalmanagement of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN basedWBG power modules will be introduced.
Abstract
The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologiesof power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importancein the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energyefficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the currentdensity increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meetthe quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si)leads to maximum operation temperatures of nearly 200oC. As a result new packaging technologies are needed to facethe demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) orgallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of powerelectronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermalmanagement of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN basedWBG power modules will be introduced.
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