Analysis of phase transitioned Ga2O3 thin films on Si substrates by post-annealing
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
We deposited amorphous Ga2O3 thin films on p-type Si(111) substrates at 500 °C using metal-organic chemical vapor deposition(MOCVD) to obtain a smooth thin film. After the deposition, the films were annealed in N2 atmosphere at temperaturesranging from 600 °C to 850 °C. It was observed that the crystal structure transitioned at temperatures of 650 °C and 800 °C,with an overall smooth surface, though surface roughness increased at the phase transition temperatures. O1s binding energyshifted based on the initial amorphous state of the film. Additionally, electrical characterization showed that while significantcurrent flowed up to temperature of 650 °C, the current decreased when the beta phase began to emerge. Schottky barrierpotential and ideality factor showed strong dependence on the post annealing temperatures.
Abstract
We deposited amorphous Ga2O3 thin films on p-type Si(111) substrates at 500 °C using metal-organic chemical vapor deposition(MOCVD) to obtain a smooth thin film. After the deposition, the films were annealed in N2 atmosphere at temperaturesranging from 600 °C to 850 °C. It was observed that the crystal structure transitioned at temperatures of 650 °C and 800 °C,with an overall smooth surface, though surface roughness increased at the phase transition temperatures. O1s binding energyshifted based on the initial amorphous state of the film. Additionally, electrical characterization showed that while significantcurrent flowed up to temperature of 650 °C, the current decreased when the beta phase began to emerge. Schottky barrierpotential and ideality factor showed strong dependence on the post annealing temperatures.