동시 스퍼터링으로 제조한 AZO-ITO 혼합박막의 증착 중 수소 혼입 영향 분석
Effect of H2 addition on the properties of transparent conducting oxide films deposited by co-sputtering of ITO and AZO
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Multicomponent transparent conducting oxide films were deposited on glass substrates at 150℃ by dual magnetron sputtering of AZO and ITO targets. In the case of mixing a limited amount of ITO (10W), resistivity of TCO films was significantly increased compared to the AZO film; from 3.5×10-3 to 9.7×10-3 Ω․cm. Deterioration of the electrical conductivity is attributed to the decreases in carrier concentration and Hall mobility. Improvement of the conductivity could be obtained for the films prepared with ITO powers larger than 40W. The lowest resistivity (ρ) of 7.3×10-4 Ω․cm was achieved when ITO power was 100 W. Effects of H2 incorporation on the electrical and optical properties of AZO-ITO films were investigated in this work. Addition of small amount of hydrogen resulted in the increase of carrier concentration and the improvement of electrical conductivity. It is apparent that the roughness of AZO-ITO films decreases dramatically after the transition of microstructure from polycrystalline to amorphous phase, which gives practical advantages such as an excellent uniformity of surface and a high etching rate. AZO-ITO films grown at sputtering ambient with hydrogen gas are expected to be applicable to optoelectronic devices such as organic light emitting diodes and flexible displays due to their sufficient electrical and structural properties.
Abstract
Multicomponent transparent conducting oxide films were deposited on glass substrates at 150℃ by dual magnetron sputtering of AZO and ITO targets. In the case of mixing a limited amount of ITO (10W), resistivity of TCO films was significantly increased compared to the AZO film; from 3.5×10-3 to 9.7×10-3 Ω․cm. Deterioration of the electrical conductivity is attributed to the decreases in carrier concentration and Hall mobility. Improvement of the conductivity could be obtained for the films prepared with ITO powers larger than 40W. The lowest resistivity (ρ) of 7.3×10-4 Ω․cm was achieved when ITO power was 100 W. Effects of H2 incorporation on the electrical and optical properties of AZO-ITO films were investigated in this work. Addition of small amount of hydrogen resulted in the increase of carrier concentration and the improvement of electrical conductivity. It is apparent that the roughness of AZO-ITO films decreases dramatically after the transition of microstructure from polycrystalline to amorphous phase, which gives practical advantages such as an excellent uniformity of surface and a high etching rate. AZO-ITO films grown at sputtering ambient with hydrogen gas are expected to be applicable to optoelectronic devices such as organic light emitting diodes and flexible displays due to their sufficient electrical and structural properties.
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