산소 분위기에서 열처리시 ZnS 나노선의 발광 강도 변화
Enhancement of Photoluminescence Intensity of ZnS Nanowires by Annealing in O2
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The influence of annealing process in an O2 atmosphere on the photoluminescence (PL) spectra properties of ZnS nanowires has been investigated. ZnS nanowires with the diameters approximately 100 nm and the lengths a few tens micrometers were synthesized by evaporating ZnS powders on Si substrates while using an Au thin film as a catalyst. ZnS nanowires had an NBE emission band at 430 nm in the violet region. The emission intensity was improved drastically by a process in which ZnS nanowires were heat-treated at 500 oC in an O2 atmosphere for 45 minutes
Abstract
The influence of annealing process in an O2 atmosphere on the photoluminescence (PL) spectra properties of ZnS nanowires has been investigated. ZnS nanowires with the diameters approximately 100 nm and the lengths a few tens micrometers were synthesized by evaporating ZnS powders on Si substrates while using an Au thin film as a catalyst. ZnS nanowires had an NBE emission band at 430 nm in the violet region. The emission intensity was improved drastically by a process in which ZnS nanowires were heat-treated at 500 oC in an O2 atmosphere for 45 minutes
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