CH4/O2의 사이클릭 유량제어에 의한 다이아몬드 박막의 특성향상

Abstract

Diamond films were deposited on 10.010.0 mm2 pretreated (100) Si substrate using CH4, H2 and O2 source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of CH4 and/or O2 flows as a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows. For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.