The Electrochemical Migration Phenomenon of the Ni-Cr Seed Layer of Sputtered FCCL
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As the demand for fine-pitch FPCB (Flexible Printed Circuit Board) increases, so do the number of applications of sputtered FCCL (Flexible Copper Clad Laminate). Furthermore, as the width between the circuit patterns decreases, greater defects are observed in the migration phenomenon. In this study we observed changes in ion migration in real circuit-pattern width using sputtered FCCL. We found that as the applied voltage and residue thickness of the NiCr seeds increase, ion migration occurs faster. If the NiCr seed layer thickens due to a high cathode power and long deposition time while being sputtered, the NiCr will form a residue that quickly becomes a factor for incurring ion migration.
Abstract
As the demand for fine-pitch FPCB (Flexible Printed Circuit Board) increases, so do the number of applications of sputtered FCCL (Flexible Copper Clad Laminate). Furthermore, as the width between the circuit patterns decreases, greater defects are observed in the migration phenomenon. In this study we observed changes in ion migration in real circuit-pattern width using sputtered FCCL. We found that as the applied voltage and residue thickness of the NiCr seeds increase, ion migration occurs faster. If the NiCr seed layer thickens due to a high cathode power and long deposition time while being sputtered, the NiCr will form a residue that quickly becomes a factor for incurring ion migration.
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