새로운 대기압 플라즈마 소스를 이용한 결정질 실리콘 태양전지 인(P) 페이스트 도핑에 관한 연구
A Study on Feasibility of the Phosphoric Paste Doping for Solar Cell using Newly Atmospheric Pressure Plasma Source
2
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.
Abstract
Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.
참고문헌 (5)
- Li, B, "Review of recent progress in solid-state dyesensitized solar cell", solar energy Materals and Solar cells, 99, pp.549~573 (2006)
- Lee, J. S, "Solar cell Engineering", pp, pp.22~229 (2007)
- Harald Kerp, "15th International Photovoltatic Solar Energy Conference", 15th International Photovoltatic Solar Energy Conference (2005)
- D. Ruby, "High efficiency silicon solar cells by RTP", Appl. Phys. Lett, 65(16), pp.2087~2199
- Gangopadhyay, U, "Spin on diffusion for silicon solar cell fabrication", J. IETE, 34(6), pp.450~ (1998)