전기화학-기계적 평탄화에 관한 연구 동향 분석
Analysis of Research Trends on Electrochemical-Mechanical Planarization
2
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
Electrochemical mechanical planarization (ECMP) was developed to overcome the shortcomings of conventional chemical mechanical planarization (CMP). Because ECMP technology utilizes electrochemical reactions, it can have a higher efficiency than CMP even under low pressure conditions. Therefore, there is an advantage in that it is possible to reduce dicing and erosions, which are physical defects in semiconductor CMP. This paper summarizes the papers on ECMP published from 2003 to 2021 and analyzes research trends in ECMP technology. First, the material removal mechanisms and the configuration of the ECMP machine are dealt with, and then ECMP research trends are reviewed. For ECMP research trends, electrolyte, processing variables and pads, tribology, modeling, and application studies are investigated. In the past, research on ECMP was focused on basic research for the development of electrolytes, but it has recently developed into research on tribology and process variables and on new processing systems and applications. However, there is still a need to increase the processing efficiency, and to this end, the development of a hybrid ECMP processing method using another energy source is required. In addition, ECMP systems that can respond to the developing metal 3D printing technology must be researched, and ECMP equipment technology using CNC and robot technology must be developed.
Abstract
Electrochemical mechanical planarization (ECMP) was developed to overcome the shortcomings of conventional chemical mechanical planarization (CMP). Because ECMP technology utilizes electrochemical reactions, it can have a higher efficiency than CMP even under low pressure conditions. Therefore, there is an advantage in that it is possible to reduce dicing and erosions, which are physical defects in semiconductor CMP. This paper summarizes the papers on ECMP published from 2003 to 2021 and analyzes research trends in ECMP technology. First, the material removal mechanisms and the configuration of the ECMP machine are dealt with, and then ECMP research trends are reviewed. For ECMP research trends, electrolyte, processing variables and pads, tribology, modeling, and application studies are investigated. In the past, research on ECMP was focused on basic research for the development of electrolytes, but it has recently developed into research on tribology and process variables and on new processing systems and applications. However, there is still a need to increase the processing efficiency, and to this end, the development of a hybrid ECMP processing method using another energy source is required. In addition, ECMP systems that can respond to the developing metal 3D printing technology must be researched, and ECMP equipment technology using CNC and robot technology must be developed.
참고문헌 (68)
- 이현섭, "화학기계적 연마(CMP) 공정에서의 트라이볼로지 연구 동향", 한국트라이볼로지학회지, 34(3), pp.115~122 (2018), 한국트라이볼로지학회[DOI]
- 이현섭, "Mechanical Aspects of the Chemical Mechanical Polishing Process: A Review", International Journal of Precision Engineering and Manufacturing, 17(4), pp.525~536 (2016), 한국정밀공학회
- Seonghyun Park, "Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper", Applied Sciences, 11(16), pp.7232~ (2021), MDPI AG[DOI]
- Thomas Bibby, "Endpoint detection for CMP", Journal of Electronic Materials, 27(10), pp.1073~1081 (1998), Springer Science and Business Media LLC[DOI]
- Fayolle, M., "Challenges of back end of the line for sub 65 nm generation", Microelectron. Eng, 70, pp.255~266 (2002)
- An, J. H., "Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)", Mater. Sci. Forum, 600-603, pp.831~834 (2009)
- Kaotaka, K., "Precise Control of PN-Junction Profiles for GaN-Based LD Structures Using GaN Substrates with Low Dislocation Densities", J. Cryst. Growth, 189-190, pp.551~555 (1998)
- Lee, H. S., "Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces", CIRP Ann. Manufact. Technol, 58, pp.485~490 (2009)
- Jeong, S., "Design of Electrolyte and Pad for High Removal Rate and Uniformity Control in Cu ECMP Process", Ph. D, pp.2010
- Lee, S. -J., "The polishing mechanism of electrochemical mechanical polishing technology", J. Mater. Process. Technol, 140, pp.280~286 (2003)
- Chen, Y. -L., "The technology combined electrochemical mechanical polishing", J. Mater. Process. Technol, 140, pp.203~205 (2003)
- Ecocomikos, L., "Integrated ElectroChemical Mechanical Planarization (Ecmp) for Future Generation Device Technology", Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) (2004)
- Li, C., "Electro-Chemical Mechanical Polishing of Silicon Carbide", Mater. Sci. Forum, 457-460, pp.801~804 (2004)
- Emery, S. B., "Chemical factors for chemical–mechanical and electrochemical-mechanical planarization of silver examined using potentiodynamic and impedance measurements", Mater. Chem. Phys, 89, pp.345~353 (2005)
- Goonetilleke, P. C., "Electrochemicalmechanical planarization of copper : Effects of chemical additives on voltage controlled removal of surface layers in electrolytes", Mater. Chem. Phys, 94, pp.388~400 (2005)
- Pettit, C. M., "Role of iodate ions in chemical mechanical and electrochemical mechanical planarization of Ta investigated using time-resolved impedance spectroscopy", Mater. Lett, 59, pp.3885~3889 (2005)
- Suni, I. I., "Cu Planarization for ULSI Processing by Electrochemical Methods : A Review", IEEE Trans. Semicond. Manufact, 18(3), pp.341~349 (2005)
- Liu, F. Q., "Cu Planarization in Electrochemical Mechanical Planarization", J. Electrochem. Soc, 153(6), pp.C377~C381 (2006)
- Mellier, M., "Full Copper Electrochemical Mechanical Planarization(Ecmp)as a Technology Enabler for the 45 and 32 nm Nodes", 2007 IEEE International Interconnect Technology Conference, pp.70~72 (2007)
- Goonetilleke, P. C., "Voltage pulse-modulated electrochemical removal of copper surface layers using citric acid as a complexing agent", Mater. Lett, 61, pp.380~383 (2007)
- Truque, D., "Wafer Level Modeling of Electrochemical-Mechanical Polishing(ECMP)", Mater. Res. Soc., Symp. Proc, 991, pp.0991-C11-0~ (2007)
- Shattuck, K. G., "An investigation of phosphate based ECMP electrolyte performance on feature scale planarization", J. Appl. Electrochem, 39, pp.1719~1724 (2009)
- Ng., D., "Friction and Wear-Mode Comparison in Copper Electrochemical Mechanical Polishing", J. Electrochem. Soc, 155(7), pp.H520~H524 (2008)
- Jeong, S., "Effect of polishing pad with holes in electro-chemical mechanical planarization", Microelectron. Eng, 85, pp.2236~2242 (2008)
- Tripathi, A., "Cu Electrochemical Mechanical Planarization Surface Quality", J. Electrochem. Soc, 156(7), pp.H555~H560 (2009)
- Han, S. -J., "Voltage-induced material removal mechanism of copper for electrochemicalmechanical polishing applications", Trans. Nonferrous Met. Soc., China, 19, pp.s262~s265 (2009)
- Gao, F., "Material removal mechanisms in electrochemical-mechanical polishing of tantalum", Electrochim. Acta, 54, pp.6808~6815 (2009)
- Gao, F., "In Situ Observation of FrictionInduced Electrochemical Reactions and Impedance in Tantalum ECMP", J. Electrochem. Soc, 156(1), pp.H80~H86 (2009)
- Sulyma, C. M., "Analysis of current transients for voltage pulse-modulated surface processing : Application to anodic electro-dissolution of copper for electrochemical mechanical planarization", J. Mater. Procss. Technol, 209, pp.1189~1198 (2009)
- Jeong, S., "Effect on Two-Step Polishing Process of Electrochemical Mechanical Planarization and ChemicalMechanical Planarization on Planarization", Jpn. J. Appl. Phys, 48, pp.066512~ (2009)
- Tiley, J., "Novel atomatic electrochemical-mechanical polishing(ECMP)of metals for scanning electron microscopy", Micron, 41, pp.615~621 (2010)
- Fukuda, A., "Removal Rate Simulation of Dissolution-Type Electrochemical Mechanical Polishing", Jpn. J. Appl. Phys, 49, pp.076701~ (2010)
- Sulyma, C. M., "Voltammetric current oscillations due to general and pitting corrosion of tantalum : Implications for electrochemical-mechanical planarization", Corros. Sci, 52, pp.3086~3098 (2010)
- Jeong, S., "Effect of mechanical factor in uniformity for electrochemical mechanical planarization", Sens. Actuator A Phys, 163, pp.433~439 (2010)
- Tominaga, S., "Hybrid Electrochemical Mechanical Planarization Process for Cu Dual-Damascene Through-Silicon Via Using Noncontact Electrode Pad", Jpn, J. Appl. Phys, 49, pp.05FG01~ (2010)
- Gao, F., "Transformable Oxidation of Tantalum in Electrochemical Mechanical Polishing(ECMP)", J. Electron. Mater, 40(2), pp.134~140 (2011)
- Chen, S. -W., "Effect of Electric Potential and Mechanical Force on Copper ElectroChemical Mechanical Planarization", Jpn. J. Appl. Phys, 51, pp.036504~ (2012)
- Lee, S. -J., "Electrochemical Mechanical Polishing of Flexible Stainless Steel Substrate for Thin-Film Solar Cells", Int. J. Electrochem. Sci, 8, pp.6878~6888 (2013)
- Li, W., "Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives", Mater. Manuf. Process, 28, pp.207~212 (2013)
- Joo, S., "Tribo-electrochemical characterization of copper thin film", Electrochim. Acta, 99, pp.133~137 (2013)
- Bian, Y. -F., "Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing", J. Cent. South Univ, 21, pp.2191~2201 (2014)
- Bian, Y., "Material Removal Mechanisms in Cu Electrochemical Mechanical Polishing", Appl. Mech. Mater, 490-491, pp.247~250 (2014)
- Bian, Y. -F., "Scratching by pad asperities in copper electrochemical-mechanical polishing", J. Cent. South Univ, 21, pp.4157~4162 (2014)
- Bian, Y. -F., "Electrolyte composition and galvanic corrosion for tuthenium", copper electrochemical mechanical polishing, 2014, pp.39, 1300~1306
- Deng, H., "Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry", Electrochem. Commun, 52, pp.5~8 (2015)
- Mohammad, A. E. K., "Electrochemical mechanical polishing technology : recent developments and future research and industrial needs", Int. J. Adv. Manuf. Technol, 86, pp.1909~1924 (2016)
- Murata, J., "Polishing-padfree electrochemical mechanical polishing of singlecrystalline SiC surfaces using polyurethane-CO2core-shell particles", Int. J. Mach. Tools Manuf, 114, pp.1~7 (2017)
- Yang, X., "AFM observation of initial oxidation stage of 4HSiC(0001)in electrochemical mechanical polishing", Procedia CIRP, 68, pp.735~740 (2018)
- Tang, X., "Investigation of anodic oxidation mechanism of 4H-SiC(0001)for electrochemical mechanical polishing", Electrochim. Acta, 271, pp.666~676 (2018)
- Murata, J., "Liquid electrolyte-free electrochemical oxidation of GaN surface using a solid polymer electrolyte toward electrochemical mechanical polishing", Electrochem. Commun, 97, pp.110~113 (2018)
- Yang, X., "Highly efficient planarization of sliced 4H-SiC(0001)wafer by slurryless electrochemical mechanical polishing", Int. J. Mach. Tools Manuf, 144, pp.103431~ (2019)
- Liu, Z., "Investigation on Material Removal Uniformity in Electrochemical Mechanical Polishing by Polishing Pad with Holes", ECS J. Solid State Sci. Technol, 8(5), pp.P3047~P3052 (2019)
- Mohammad, A. E. K., "Synergistic integrated design of an electrochemical mechanical polishing end-effector for robotic polishing applications", Robot. Comput. Integr. Manuf, 55, pp.65~75 (2019)
- Gao, B., "Electro-Chemical Mechanical Polishing of 4H-SiC for Scratch-Free Surfaces with Less Oxide Layer at High Efficiency", ECS J. Solid State Sci. Technol, 8(11), pp.P677~P684 (2019)
- Yang, X., "Obtaining Atomically Smooth 4H–SiC(0001)Surface by Controlling Balance Between Anodizing and Polishing in Electrochemical Mechanical Polishing", Nanomanuf. Metrol, 2, pp.140~147 (2019)
- Wu, Di., "On the reaction mechanism of a hydroxyethylidene diphosphonic acid-based electrolyte for electrochemical mechanical polishing of copper", Electrochem. Commun, 103, pp.48~54 (2019)
- Wu, D., "Two-Step Electrochemical Mechanical Polishing of Pure Copper", ECS J. Solid State Sci, 8(11), pp.P699~P703 (2019)
- Yang, X., "Ultrasonic-assisted anodic oxidation of 4H-SiC(0001)surface", Electrochem. Commun, 100, pp.1~5 (2019)
- Gao, B., "Polystyrene", CeO2 Core, ECS J. Solid State Sci. Technol, pp.2020, 9[DOI]
- Bai, Y., "Dry mechanical-electrochemical polishing of selective laser melted 316L stainless steel", Mater Des, 193, pp.108840~ (2020)
- Xu, B., "Five-axis Numerical Control of Electrochemical Mechanical Polishing of an Integral Impeller", Int. J. Electrochem. Sci, 15, pp.12504~12523 (2020)
- Murata, J., "Investigation of Electrolytic Condition on Abrasive-Free Electrochemical Mechanical Polishing of 4H-SiC Using Ce Thin Film", ECS J. Solid State Sci. Technol, 9, pp.034002~ (2020)
- Guo, J., "Investigation on flatness and surface integrity of pure copper processed by electrochemical mechanical polishing", Procedia CIRP, 95, pp.721~725 (2020)
- Seo, Y. -J., "Methodological Consideration on the Prediction of Electrochemical Mechanical Polishing Process Parameters by Monitoring of Electrochemical Characteristics of Copper Surface", J. Electrochem. Sci. Technol, 11(4), pp.346~351 (2020)
- Zhao, C., "Electrochemical mechanical polishing of internal holes created by selective laser melting", J. Manuf. Process, 64, pp.1544~1562 (2021)
- Yang, X., "Novel SiC wafer manufacturing process employing three-step slurryless electrochemical mechanical polishing", J. Manuf. Process, 70, pp.350~360 (2021)
- Yang, X., "Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC(0001)surface", Appl. Surf. Sci, 562, pp.150130~ (2021)
- Newman, J., "Electrochemical systems" (2004), John Wiley & Sons
