Time-domain CMOS temperature sensors with temperature-to-digital converter
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초록
In this paper, two types of CMOS temperature sensors using temperature-to-digital converter (TDC) are proposed. The proposed circuits are suitable for low-power, small- area hardware because it is a temperature sensor made only of general MOS transistors. It is also simple to implement calibration scheme in order to obtain desired accuracy. One temperature sensor is a temperature sensor using ring oscillator with the supply voltage variation compensation scheme and the other utilizes relaxation oscillator. Each circuit was fabricated with Samsung 65nm 1P4M CMOS technology and operates over the temperature range from -40◦C to 120◦C. The chip area of the temperature sensor using ring oscillator and relaxation oscillator is 0.056mm2 and 0.047mm2, respectively.
Abstract
In this paper, two types of CMOS temperature sensors using temperature-to-digital converter (TDC) are proposed. The proposed circuits are suitable for low-power, small- area hardware because it is a temperature sensor made only of general MOS transistors. It is also simple to implement calibration scheme in order to obtain desired accuracy. One temperature sensor is a temperature sensor using ring oscillator with the supply voltage variation compensation scheme and the other utilizes relaxation oscillator. Each circuit was fabricated with Samsung 65nm 1P4M CMOS technology and operates over the temperature range from -40◦C to 120◦C. The chip area of the temperature sensor using ring oscillator and relaxation oscillator is 0.056mm2 and 0.047mm2, respectively.
참고문헌 (7)
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