Fabrication and characterization of n-IZO / p-Si and p-ZnO:(In, N) / n-Si thin film hetero-junctions by dc magnetron sputtering
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Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n- ZnO:In/p-Si and p- ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV–vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current–voltage (I–V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..
Abstract
Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n- ZnO:In/p-Si and p- ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV–vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current–voltage (I–V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..
참고문헌 (20)
- Bian JM, , Appl Phys Lett, 84, pp.541~543 (2004)
- Young SJ, , Acta Mater, 55, pp.329~333 (2007)
- Jiming Bian, , Chemical Physics Letters, 393, pp.256~259 (2004)
- Manoj Kumar, , Applied Surface Science, 256, pp.1329~1332 (2009)
- S.Y. Liu, , J. Appl. Phys, 105, pp.114504~ (2009)
- W.I. Park, , Adv. Mater, 16, pp.87~90 (2004)
- Ya.I. Alivov, , Appl. Phys. Lett, 83, pp.4719~ (2003)
- D.M. Nanditha, , Appl. Phys. Lett, 90, pp.113505~ (2007)
- I.S. Jeong, , Appl. Phys. Lett, 83, pp.5313~ (2003)
- Y.S. Choi, , J. Vac. Sci. Technol, 20, pp.2384~ (2002)
- P.L. Chen, , J. Appl. Phys, 101, pp.053103~ (2007)
- J.W. Sun, , J. Appl. Phys, 41, pp.155103~ (2008)
- J.D. Ye, , Appl. Phys. Lett, (88), pp.141918~ (2006)
- Tao Chen, , Appl. Phys A, 98, pp.357~365 (2010)
- Chen LL, "Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films", Appl Phys Lett, 89, pp.252113~ (2006)
- Lung-Chien Chen, "P-ZnO", n-Si Photodiodes Prepared by Ultrasonic Spraying Pyrolysis Metho, 2008, pp.1, 10~13
- Manoj Kumar, "Formation of Al–N co-doped p-ZnO", n-Si (1 0 0) heterojunction structure by RF co-sputtering technique, 2009, pp.256, 1329~1332
- Manoj Kumar, , Applied Surface Science, 256, pp.1329~1332 (2009)
- He Bo, "Xu Jing Yin Yan Ting", Materials Science in Semiconductor Processing, 12, pp.248~252 (2009)
- J.D. Ye, , Appl. Phys. Lett. Vol, 88, pp.182112~ (2006)