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CMOS-Memristor Hybrid 4-bit Multiplier Circuit for Energy-Efficient Computing

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In this paper, we propose a CMOS-memristor hybrid circuit that can perform 4-bit multiplication for future energy-efficient computing in nano-scale digital systems. The proposed CMOS-memristor hybrid circuit is based on the parallel architecture with AND and OR planes. This parallel architecture can be very useful in improving the power-delay product of the proposed circuit compared to the conventional CMOS array multiplier. Particularly, from the SPECTRE simulation of the proposed hybrid circuit with 0.13-mm CMOS devices and memristors, this proposed multiplier is estimated to have better power-delay product by 48% compared to the conventional CMOS array multiplier. In addition to this improvement in energy efficiency, this 4-bit multiplier circuit can occupy smaller area than the conventional array multiplier, because each cross-point memristor can be made only as small as 4F2.

Abstract

In this paper, we propose a CMOS-memristor hybrid circuit that can perform 4-bit multiplication for future energy-efficient computing in nano-scale digital systems. The proposed CMOS-memristor hybrid circuit is based on the parallel architecture with AND and OR planes. This parallel architecture can be very useful in improving the power-delay product of the proposed circuit compared to the conventional CMOS array multiplier. Particularly, from the SPECTRE simulation of the proposed hybrid circuit with 0.13-mm CMOS devices and memristors, this proposed multiplier is estimated to have better power-delay product by 48% compared to the conventional CMOS array multiplier. In addition to this improvement in energy efficiency, this 4-bit multiplier circuit can occupy smaller area than the conventional array multiplier, because each cross-point memristor can be made only as small as 4F2.

참고문헌 (9)

  1. "International Technology Roadmap for Semiconductors (ITRS) in 2011", ~
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  3. D. B. Strukov, "The missing memristor found", Nature, 453, pp.80~83 (2008)
  4. A. Flocke, "Fundamental analysis of resistive nanocrossbars for the use in hybrid nano", CMOS-memory, 2007, 328~331
  5. C. Kügeler, "High density 3D memory architecture based on the resistive switching effect", Solid State Electron, 53(12), pp.1287~1292 (2009)
  6. J. Liang, "Cross-point memory array without cell selectors-device characteristics and data storage pattern dependencies", IEEE Trans. Electron Device, 57(10), pp.2531~2538 (2010)
  7. C. J. Chevallier, "A 0.13 μm 64Mb multi-layered conductive metal-oxide memory", ISSCC, Dig. Tech. Papers, pp.260~261 (2010)
  8. S. J. Ham, "Low-power VDD", 3 write scheme with inversion coding circuit for complementary memristor array, 2013, pp.12(5), 851~857
  9. 최준명, "PCB에 구현한 멤리스터 에뮬레이터 회로 및 응용", 전기전자학회논문지, 17(3), pp.324~331 (2013), 한국전기전자학회[DOI]

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