4H-SiC MPS 다이오드의 P 영역 최적화에 관한 연구
A Study on Optimization of the P-region of 4H-SiC MPS Diode
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In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga’s Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.
Abstract
In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga’s Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.
참고문헌 (4)
- Kimimori Hamada, "SiC-Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles", IEEE Transactions on Electron, 62(2), pp.278~285 (2015)
- T. Takaku, "Development of 1700V Hybrid Module with Si-IGBT and SiC-SBD for High Efficiency", 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia), pp.844~849 (2015)
- Lin Zhu, "Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers", IEEE Transactions on Electron, 53(2), pp.363~368 (2006)
- Mihai Draghici, "A New 1200 V SiC MPS Diode with Improved Performance and Ruggedness", Silicon Carbide and Related Materials 2014 on Ma terials Science Forum, pp.608~611 (2014)