전사 공정을 이용한 산화막 정렬 패턴 제작과액정 배향 특성 연구
Parallel pattern fabrication on metal oxide film using transferring process for liquid crystal alignment
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초록
HfZnO 박막 위 패턴 전사 기법을 이용하여 기존의 러빙법을 대체하는 배향 공정에 대하여 연구하였다. 정렬 패턴은 레이저 간섭 리소그래피를 이용하여 실리콘 웨이퍼 위에 제작하였다. 졸겔 공정을 이용하여 HfZnO 용액을 제작하였고, 유리기판위에 스핀코팅하였다. 미리 제작한 정렬패턴을 스핀코팅된 HfZnO 위에 올려놓고, 100 ℃에서 30분간 소성하였다. HfZnO 박막에 평행한 그루브가 형성되었음을 atomic force microscopy 와 scanning electron microscopy로부터 확인할 수 있었다. HfZnO 박막을 이용하여 액정 셀을 제작하였으며, POM 분석으로부터 액정이 균일하게 정렬되었음을 확인할 수 있었다. 액정은 0.25 o의 프리틸트 각을 가졌으며, 수평배향 특성을 보여주었다. 액정 분자는 평행한 그루브에 의한 HfZnO 박막 표면이방성에 의하여 균일하게 정렬되었음을 확인할 수 있었다.
Abstract
We demonstrate an alternative alignment process using transferring process on solution driven HfZnO film. Parallelpattern is firstly fabricated on a silicon wafer by laser interference lithography. Prepared HfZnO solution fabricated bysol-gel process is spin-coated on a glass substrate. The silicon wafer with parallel pattern is placed on the HfZnO filmand annealed at 100 ℃ for 30 min. After transferring process, parallel grooves on the HfZnO film is obtained which isconfirmed by atomic force microscopy and scanning electron microscopy. Uniform liquid crystal alignment is achievedwhich is attributed to an anisotropic characteristic of HfZnO film by parallel grooves. The liquid crystal cell exhibited apretilt angle of 0.25 o which showed a homogeneous alignment property.
참고문헌 (13)
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