3D NAND Flash Memory의 Remnant Polarization(Pr)과 Saturated Polarization(Ps)에 따른 Retention 특성 분석
The Analysis of Retention Characteristic according to Remnant Polarization(Pr) and Saturated Polarization(Ps) in 3D NAND Flash Memory
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초록
본 논문에서는 ferroelectric(Hf02)구조가 적용된 3D NAND flash memory의 parameter에 따른 lateral charge migration 의 retention과 Vt1,를 분석하였다. E가 클수록 program 시 ferroelectric에서 가능한 최대 polarization이 크기 때문에 초기 屈 는 P, 25µC/cm2보다 P, 70µC/cm2에서 약 1.04V차이로 커진다. 또한 Program 이후 trap된 전자는 시간이 지남에 따라서 lateral charge migration이 발생한댜 Program 이후 gate에 전압을 가하지 않고 ferroelectric은 polarization을 유지하기 때 문에 E와 크계 관계없이 R이 클수록 polarization이 커지고 lateral charge migration에 의한 A Vth는 P, 5µC/cm2보다 Pr 50µC/cm2에서 약 1.54V차이로 직아진댜
Abstract
In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (Hf02) structure is applied and L1 v;h were analyzed. The larger the Ps, the greater maximum polarization possible in ferroelectric during programming. Therefore, the initial Vth increases by about 1.04V difference at P, 70µ,C/cm2 than at Ps 25µ,C/cm2. Also, electrons trapped after the program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after programming, regardless of Ps value, polarization increases as P, increases and the L1 Vth due to lateral charge migration becomes smaller by about 1.54V difference at P, 50µ,C/cm2 than P, 5µ,C/cm2.
참고문헌 (8)
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