3D NAND Flash Memory에 Ferroelectric Material을사용한 Current Path 개선
Improvement of Current Path by Using Ferroelectric Material in 3D NAND Flash Memory
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초록
본 논문에서는 3D NAND Flash memory의 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 current path를 분석했다. O/N/O 구조는 Vread가 인가되면 neighboringcell의 E-field로 인해 current path가 channel 후면에 형성된다. 반면 O/N/F 구조는 ferroelectric material의 polarization으로 인해 electron이 channel 전면으로 이동하여 current path가 전면에 형성된다. 또한 channel thickness와 channel length에 따른 소자 특성을 분석했다. 분석 결과 O/N/F 구조의 전면 electron current density 증가는 O/N/O 구조보다 2.8배 더 높았고 O/N/F 구조의 전면 electron current density 비율이 17.7% 높았다. 따라서 O/N/O 구조보다 O/N/F 구조에서 전면current path가 더 효과적으로 형성된다.
Abstract
In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flashmemory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by aferroelectric. In the O/N/O structure, when Vread is applied, a current path is formed on the backside of thechannel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formedon the front side due to the polarization of the ferroelectric material, causing electrons to move toward thechannel front. Additionally, we performed an examination of device characteristics considering channel thicknessand channel length. The analysis results showed that the front electron current density in the O/N/F structureincreased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/Fstructure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structurethan in the O/N/O structure.
참고문헌 (15)
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