빠른 회로 시뮬레이션을 위한 멤리스터의 전류-전압 및과도 동작 콤팩트 Verilog-A 모델
Compact Verilog-A Model of Current-Voltage and Transient Behaviors of Memristors for Fast Circuit Simulation
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초록
본 논문은 저전력, 높은 집적도, 빠른 스위칭 속도 등의 이점으로 차세대 비휘발성 메모리 기술로 주목받고 있는 멤리스터의butterfly 전류-전압 특성과 시간의 변화에 따른 transient 특성에 대한 콤팩트한 모델을 제안하고 이를 설명한다. 구체적으로 멤리스터 소자의 측정과 비교하여 모델의 정확도를 평가하여 회로 시뮬레이션에 본 모델을 적용하여 시뮬레이션 시간이 단축되는 것을확인하려 한다. 멤리스터 측정과 본 논문의 모델의 오차는 2% 이하로 계산이 되어서 본 모델이 멤리스터의 전류-전압 특성을 높은정확도로 예측할 수 있음을 보여준다. 이전 모델과 본 논문의 멤리스터 모델의 시뮬레이션 시간을 비교한 결과 본 논문의 모델을이용해서 회로 시뮬레이션을 수행하면 이전의 모델에 비해 시뮬레이션 시간이 27% 정도 단축이 될 수 있음을 확인할 수 있다. 본논문에서 제안한 멤리스터 콤팩트 모델은 특히 엣지 인텔리젼스 하드웨어의 설계 등에서 시뮬레이션 시간을 단축하여 시스템 총 설계 시간을 줄이는 데 기여할 수 있을 것으로 기대된다.
Abstract
This paper proposes and describes a compact model for the butterfly current-voltage characteristics and timevaryingtransient characteristics of memristors, which are attracting attention as a next-generation nonvolatilememory technology due to their advantages of low power, high integration, and fast switching speed. Specifically,we want to evaluate the accuracy of the model by comparing it to measurements of memristor devices and see ifthe simulation time is reduced by applying the model to circuit simulations. The error between the memristormeasurements and the model in this paper is calculated to be less than 2%, showing that the model can predictthe current-voltage characteristics of the memristor with high accuracy. It can be observed that utilizing the modelin this paper to perform circuit simulation can cut simulation time by around 27% when compared to the priormodel by comparing the simulation times of the memristor model and the previous model. The memristorcompact model proposed in this paper is expected to contribute to reducing the total system design time byreducing simulation time, especially in the design of edge intelligence hardware.
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