산소 후열처리에 따른 Ga2O3/SiC photodetector의전기 광학적 특성
Impact of Oxygen Annealing on Deep-level Traps in Ga2O3/SiC Photodetectors
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
본 연구에서는 radio frequency (RF)-스퍼터링을 이용하여 SiC 기판 위에 Ga2O3 박막을 증착하여 Metal-Semiconductor-Metal(MSM) UV photodetector (PD)를 제작하였고, 산소 후열처리에 따른 PD 성능을 연구하였다. 산소 후열처리된 Ga2O3 박막은 외부 광에 대한 전류의 상당한 증가와 시간 의존성 on/off 광 응답 특성에서 측정된 감소시간이 1.21, 1.12 s로 후열처리를 하지 않은 박막의 감소시간인 1.34, 3.01 s 보다 더 빠른 반응을 보여주었다. 이러한 특성은 산소 후열처리 후의 산소 공공 및 결함 분포변화에 기인한다. 우리의 연구 결과는 산소 후열처리가 PD 성능 향상에 영향을 미칠 수 있다는 것을 확인하였다
Abstract
In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal(MSM) UV photodetector (PD) fabricated by radio frequency (RF)–sputtered Ga2O3 films on SiC substrates. OxygennnealedGa2O3 films displayed a notable increase in photocurrent and a faster decay time, indicating a decreasein persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variationof defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance throughoxygen annealing.
참고문헌 (17)
- Baliga, B. J., "Fundamentals of power semiconductor devices" (2010), Springer Science & Business Media
- S. J. Pearton, "A review of Ga2O3 materials, processing, and devices", Applied Physics Reviews, 5(1), pp.011301~ (2018), AIP Publishing[DOI]
- Hao Zhang, "Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering", Vacuum, 146, pp.93~96 (2017), Elsevier BV[DOI]
- Lu Huang, "Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures", IEEE Photonics Journal, 9(4), pp.1~8 (2017), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- Young-Jae Lee, "Effect of Oxygen Annealing on the Characteristics of Isotype Ga2O3", 4H-SiC Heterojunction Diodes, 2020, pp.15(5), 561~565[DOI]
- Z. Zhang, "Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy", Applied Physics Letters, 108(5) (2016), AIP Publishing[DOI]
- Esmat Farzana, "Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, 123(16) (2018), AIP Publishing[DOI]
- Farzana, Esmat, "Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3", Apl Materials, 7(2) (2019)
- Shen, Zhenghao, "The effect of oxygen annealing on characteristics of β-Ga2O3 solarblind photodetectors on SiC substrate by ion-cutting process", Journal of Alloys and Compounds, 889, pp.161743~ (2021)[DOI]
- Patrycja Makuła, "How To Correctly Determine the Band Gap Energy of Modified Semiconductor Photocatalysts Based on UV–Vis Spectra", The Journal of Physical Chemistry Letters, 9(23), pp.6814~6817 (2018), American Chemical Society (ACS)[DOI]
- Kai-Jhih Gan, "Highly durable and flexible gallium-based oxide conductive-bridging random access memory", Scientific Reports, 9(1), pp.14141~ (2019), Springer Science and Business Media LLC[DOI]
- Shao-Yu Chu, "Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System", Sensors, 20(21), pp.6159~ (2020), MDPI AG[DOI]
- Yuan Qin, "Review of deep ultraviolet photodetector based on gallium oxide", Chinese Physics B, 28(1), pp.018501~ (2019), IOP Publishing[DOI]
- Meng Zhang, "High-Performance Photodiode-Type Photodetectors Based on Polycrystalline Formamidinium Lead Iodide Perovskite Thin Films", Scientific Reports, 8(1), pp.11157~ (2018), Springer Science and Business Media LLC[DOI]
- Liu, Zeng, "Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3 Deep-Ultraviolet Photodetector", IEEE Transactions on Electron Devices, 69(10), pp.5595~5602 (2022)
- D. V. Lang, "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors", Journal of Applied Physics, 45(7), pp.3023~3032 (1974), AIP Publishing[DOI]
- Zhaoqing Feng, "Influence of annealing atmosphere on the performance of a β-Ga 2 O 3thin film and photodetector", Optical Materials Express, 8(8), pp.2229~ (2018), The Optical Society[DOI]