Stacking-Enabled NPN Heterostructures with GaN Collectors for Bipolar Power Devices
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초록
Npn heterostructures with GaN collectors were fabricated using nanomembrane (NM) stacking. N- and p-Si NMs weretransfer-printed onto the n-GaN substrates, resulting in the formation of vertical n-Si/p-Si/n-GaN heterostructures. Electrical measurements of Si/Si and Si/GaN pn heterostructures exhibited rectifying properties, indicating that theformation of bipolar junctions was feasible through NM stacking. The energy band diagram of stacking-enablednpn heterostructure was analyzed to explain the rectifying behaviors of base-emitter and collector-base junctions,as well as to suggest potential applications for bipolar junction transistors with a GaN subcollector
Abstract
Npn heterostructures with GaN collectors were fabricated using nanomembrane (NM) stacking. N- and p-Si NMs weretransfer-printed onto the n-GaN substrates, resulting in the formation of vertical n-Si/p-Si/n-GaN heterostructures. Electrical measurements of Si/Si and Si/GaN pn heterostructures exhibited rectifying properties, indicating that theformation of bipolar junctions was feasible through NM stacking. The energy band diagram of stacking-enablednpn heterostructure was analyzed to explain the rectifying behaviors of base-emitter and collector-base junctions,as well as to suggest potential applications for bipolar junction transistors with a GaN subcollector
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