Effects of NH3 pre-treatment time on nitrogen-polar GaN grown on carbon-face 4H-SiC using high-temperature metal-organic chemical vapor deposition
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We investigated the effects of NH3 pretreatment time on N-polar GaN grown on 4o off-cut C-face 4H-SiC using hightemperature metal-organic chemical vapor deposition. The NH3 pre-treatment time was changed from 2 to 32 minutes at1,350 oC. The polarity of layer was confirmed by aqueous KOH etching method. As the NH3 treatment time increased, the etchrate of the layer was increased and the structural and optical properties were deteriorated. The total hillock density of sampleswas 7.5, 12.9, and 25.1 × 102 cm-2 respectively. Furthermore, we compared the luminescence spectra of Ga-polar and N-polarGaN films using low-temperature photo-luminescence measurement. The N-polar GaN layer showed Y1 peak (3.45 eV), whichis attributed to the existence of inversion domain boundary (IDB) in the layer.
Abstract
We investigated the effects of NH3 pretreatment time on N-polar GaN grown on 4o off-cut C-face 4H-SiC using hightemperature metal-organic chemical vapor deposition. The NH3 pre-treatment time was changed from 2 to 32 minutes at1,350 oC. The polarity of layer was confirmed by aqueous KOH etching method. As the NH3 treatment time increased, the etchrate of the layer was increased and the structural and optical properties were deteriorated. The total hillock density of sampleswas 7.5, 12.9, and 25.1 × 102 cm-2 respectively. Furthermore, we compared the luminescence spectra of Ga-polar and N-polarGaN films using low-temperature photo-luminescence measurement. The N-polar GaN layer showed Y1 peak (3.45 eV), whichis attributed to the existence of inversion domain boundary (IDB) in the layer.
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