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Growth of oriented LaF3 thin films on Si (100) substrates by the pulsed laser deposition method
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Photoluminescence of Li-doped Y2O3:Eu3+ thin film phosphors grown by pulsed laser depositionSoung-SooYi한국센서학회 · 센서학회지2002 · 제11권 제6호Substrate temperature dependence of La0.7Ca0.3 MnO₃epitaxial films grown by pulsed laser deposition이찬규, Bon Heun Koo, Hung Su Im, Jun-Ki Chung, Won-Jeong Kim, Young Joo Kim청정에너지연구소 · Journal of Ceramic Processing Research2008 · 제9권 제5호PLD방법으로 Al2O3(0001) 기판 이에 증착한 Y2O3:Eu3+ 박막이 형광 특성이성수한국센서학회 · 센서학회지2004 · 제13권 제3호Growth of nanocrystalline 3C-SiC a on Si substrate by Plasma-enhanced Chemical Vapor DepositionByung-MinKim, Dong-JinKim, Kwang-HoKim, Myung-ChangKang, Seog-YoungYoon청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제2호The effect of the processing parameters on the growth of GaN thick films by a sublimation techniqueCheongHyunRoh, KwangBoShim, TaeGyoungLee, YoungJuPark한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제5호Surface characteristics of Mn-substituted (K0.5Na0.5)(Nb0.995Mn0.005)O3 thin films deposited on Pt/Ti/SiO2/Si(100) substrates김연중한국표면공학회 · 한국표면공학회지2025 · 제58권 제5호
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