PLD방법으로 Al2O3(0001) 기판 이에 증착한 Y2O3:Eu3+ 박막이 형광 특성
Photoluminescence Characteristics of Y2O3:Eu3+ Thin Film Grown on Al2O3(0001) Substrate by PLD
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Abstract
Y2O3:Eu3+ thin films have been grown on Al2O3(0001) substrates by a pulsed laser deposition (PLD) method. Thephosphor thin films were deposited at a substrate temperature of 500, 600, and 700oC under the oxygen pressure of 100,200 and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on thesubstrate temperature and oxygen pressure. The films grown on Al2O3(0001) substrate even under the different substratetemperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strongluminescence of 5D0-7F2 transition within Eu3+ peaking at 612 nm. The crystallinity and luminescence intensity of the filmshave been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, thecrystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness havesimilar behaviors as a function of oxygen pressure. At 20 mTorr, both photoluminescence intensity and surface roughnessshow a maximum.
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