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Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition
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관련 논문AI추천
Growth of nanocrystalline 3C-SiC a on Si substrate by Plasma-enhanced Chemical Vapor DepositionByung-MinKim, Dong-JinKim, Kwang-HoKim, Myung-ChangKang, Seog-YoungYoon청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제2호The effects of initial gas composition and pressure on the growth behavior of CVD SiC films최두진, Young-JinLee청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제3호The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor depositionDongChanLim, DooJinChoi청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제3호A study of growth properties of SiC whiskers at various temperatures and input gas ratios on different Si substrates최두진, Dong Chan Lim청정에너지연구소 · Journal of Ceramic Processing Research2004 · 제5권 제2호Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysisChinhoPark, DeoksunYoon, HongH.Lee, SeokkiYeo, WookhyunKoh한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제4호CVD에 의한 M/NEMS용 다결정 3C-SiC 박막 성장김강산, 정귀상, 정준호한국센서학회 · 센서학회지2007 · 제16권 제2호
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