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RF-PECVD법에 의해 증착된 DLC 박막의 결합구조와 기계적 특성에 관한 보조가스의 영향

Effect of the additive gas on the bonding structure and mechanical properties of the DLC films deposited by RF-PECVD

최봉근
한국결정성장학회 (The Korea Association Of Crystal Growth, Inc.)|2015.08|한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)|제25권 제4호|pp. 145-152|DOI http://dx.doi.org/10.6111/JKCGCT.2015.25.4.145

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참고문헌

주제분류재료공학

초록

rf-PECVD 방법에 의해서 CH4+H2 혼합가스를 이용Si-웨이퍼 위에 DLC 박막을 증착할 때, 이산화탄소나 질소등 보조가스가 증착된 박막의 결합구조와 기계적 특성에 미치는 영향을 고찰하였다. DLC 박막의 증착속도는 rf-power가증가함에 따라서 증가하지만, 보조가스의 양이 증가함에 따라서는 감소하였다. 또한, 이산화탄소(CO2) 가스가 증가함에 따라 박막내 수소 함량은 감소하였으나, sp 3 /sp 2 결합 비는 증가하였다. 질소(N2) 가스가 증가하는 경우는 수소 함량은 감소하였으나, sp 3 /sp 2 결합비 변화에 있어 경향성은 보이지 않는 것으로 확인되었다.

Abstract

In this work, we were investigated the effect of the additive gases on the relationship between bonding structure and mechanical properties of the deposited films when the DLC films were deposited on Si-wafer by the rf-PECVD method with the addition of small amounts of carbon dioxide and nitrogen to the mixture gas of methane and hydrogen. The deposition rate of the films increased as the rf-power increased, while it decreased with increasing the amount of additive gases. Also, as the carbon dioxide gas increased, the hydrogen content in the films decreased but the sp 3 /sp 2 ratio of the films increased. In case of nitrogen gas, the hydrogen content decreased, however the sp 3 /sp 2 ratio and nitrogen gas flow rate did not show a specific tendency.

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