Ni/Si 기판을 사용하여 성장시킨 비결정질 SiOx 나노 와이어의 성장 메커니즘
Direct synthesis mechanism of amorphous SiOx nanowires from Ni/Si substrate
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초록
Vapor phase epitaxy(VPE)법을 사용하여 amorphous SiOx nanowires를 성장시켰다. Ni thin film을 촉매로 사용하여 Si 기판위에 800~1100oC 범위의 온도에서 성장시켰으며, SiOx nanowires의 성장 메커니즘은 Vapor-liquid-solid(VLS)으로 확인되었다. SiOx nanowires의 shape와 morphology는 scanning electron microscope(SEM)으로 분석하였으며, cotton-like형태이고 길이는 10 mm 정도였다. 그리고 구조적 특징은 transmission electron microscope(TEM)으로 관찰하였고, SiOx nanowires의 성분 분석은 energy dispersed X-ray spectroscopy(EDS)로 하였다. EDX spectrum으로 nanowires가 Si와 O로 구성되어졌음을 확인하였다.
Abstract
The amorphous SiOx nanowires were synthesized by the vapor phase epitaxy (VPE) method. SiOx nanowires were formed on silicon wafer of temperatures ranged from 800~1100oC and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous SiOx nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing SiOx nanowires with the length of more than about 10 mm. The SiOx nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.
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