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Pb(Sc1/2Nb1/2)O3 박막 형성에 미치는 공정변수의 영향

Effect of the processing variables on the formation of Pb(Sc1/2Nb1/2)O3 thin layers

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주제분류재료공학

초록

Sol-gel 법으로 제조한 Pb(Sc1/2Nb1/2)O3(이하 PSN) sol을 이용하여 스핀 코팅법으로 Pt(111)/Ti/SiO2/Si 기판위에 제조한 박막의 제조 공정에 따른 영향을 연구하였다. Pt 기판위에 PSN sol을 증착, 건조한 후에 370oC에서 5분간 열처리를 행한 후 10oC/sec의 급속 가열로 600~700oC에서 최종 열처리한 경우에 박막은 (111)면으로 우선 배향하는 것으로 나타났다. 그러나 중간 열처리를 거치지 않고, 급속가열에 의한 최종 열처리만을 행한 경우에는 (100)면으로 우선 배향하는 것으로 나타났다. 한편, 중간 열처리 후 4oC/min의 승온속도로 관상로에서 최종 열처리를 행한 경우에는 (111)면과 (100)면이 동시에 나타나는 것으로 나타났다. 동일한 조건하에서 박막의 두께는 모두 300로 중간 열처리 공정이 어떠한 영향도 미치지 않는 것으로 나타났다.

Abstract

Effect of the processing variables on the formation of Pb(Sc1/2Nb1/2)O3 (hereafter PSN) thin layers prepared on Pt(111)/Ti/SiO2/Si substrates using the sol-gel and the spin coating method has been studied. After each deposition, the coated films were heated at 370oC for 5 min. Then they were finally sintered at temperature range of 600~700oC by RTA(rapid thermal annealing). The final multilayered films showed a (111) preferred orientation. On a while, the layer-bylayer crystallization of multilayered amorphous thin films without the intermediate heating exhibited a (100) preferred orientation. In case of heat treatment in the tube furnace with the heating rate of 4oC/min, (100) and (111) oriented thin layers were formed simultaneously. The microstructure of the deposited films were dense and crack-free with thickness of 300nm, irrespective of the processing variables.

참고문헌 (16)

  1. Alain C. Pierre, "Introduction to sol-gel processing", ~ (1998)
  2. K. Uchino, "Electrostrictive actuators: materials and applications", J. Am. Ceram. Soc. Bull., 65, pp.647~ (1986)
  3. S.L. Swartz, "Dielectric properties of lead magnesium niobate ceramics", J. Am. Ceram. Soc., 67, pp.311~ (1984)
  4. J.C. Ho, "Synthesis of Pb(Mg1", 3 Nb2, J. Mater. Sci., pp.1995, 30[DOI]
  5. V. Chikarmane, "Comparative study of the perovskite phase microstructure evolution and electrical properties of lead zirconate titanate thin-film capacitors annealed in oxygen and nitrogen ambients", Appl. Phys. Lett., 59(22), pp.2850~ (1991)
  6. G.A.C.M. Spierings, "Preparation and ferroelectric properties of PbZr0.53Ti0.47O3 thin films by spin coating and metalorganic decomposition", J. Appl. Phys., 70(4), pp.2290~ (1991)
  7. F. Chu, "Thickness dependence of the electrical properties of sol-gel derived lead zirconate thin films with (111) and (100) texture", Mater. Res. Soc. Symp. Proc., 통권 : 493, pp.409~ (1998)
  8. C.K. Kwak, "Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process", J. Mater. Res., 8, pp.339~ (1993)
  9. M.D. Carper, "Preparation of oriented PbTiO3 thin films using a spin-on sol-gel process", Appl. Phys. Lett., 63(2), pp.12~ (1993)
  10. H.N. Al-shareef, "“Ferroelectrics”, 152", 133~ (1994)
  11. S.Y. Chen, "Temperature-time texture transition of Pb(Zr1 − XTiX)O3 thin films: I. Role of Pbrich intermediate phases", J. Am. Ceram. Soc., 77(9), pp.2332~ (1994)
  12. S.Y. Chen, "Temperature-time texture transition of Pb(Zr1 − XTiX)O3 thin films: II. Heat treatment and compositional effects", J. Am. Ceram. Soc., 77(9), pp.2337~ (1994)
  13. Y. Liu, "Nucleation- or growth-controlled orientation development in chemically derived ferroelectric lead zirconate titanate (Pb(ZrxTi1 − x)O3, x = 0.4) thin films", J. Am. Ceram. Soc., 79(2), pp.495~ (1996)
  14. Y. Liu, "Sequence of phase formation in chemically derived ferroelectric lead zirconate titanate Pb(Zr0.4Ti0.6)O3 thin films", J. Am. Ceram. Soc., 80(9), pp.2410~ (1997)
  15. K.G. Brooks, "Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates", J. Mater. Res., 9(10), pp.2540~ (1994)
  16. T. Hase, , Intergrated Ferroelectrics, 8, pp.89~ (1995)

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