나노결정질 다이아몬드 seeding 효율 향상을 위한 silicon 표면 texturing
Silicon surface texturing for enhanced nanocrystalline diamond seeding efficiency
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참고문헌
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초록
나노결정질 다이아몬드 박막 증착을 위한 전처리 공정으로 SF6/O2 유도결합 플라즈마를 이용하여 Si 기판 표면을 texturing하였다. SF6/O2 플라즈마 texturing은 2~16 범위의 매우 넓은 정규화된 표면 조도 선택성을 제공할 수 있음을 확인하였다. Texturing된 Si 기판 표면의 나노 다이아몬드 입자 seeding 이후 기존 기계적 연마 전처리에 비해 현저히 향상된~6.5 × 1010cm−2의 높은 핵형성 밀도를 확보하였다.
Abstract
SF6/O2 inductively coupled plasmas were employed to texture Si surface as a pretreatment for nanocrystalline diamond film growth. It was found that the SF6/O2 plasma texturing provided a very wide process window where normalized roughness values in the range of 2~16 could be obtained. Significantly improved nucleation densities of ~6.5 × 1010 cm−2compared to conventional mechanical abrasion were achieved after seeding for the textured Si substrate.
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