AlN 단결정 성장에 관한 연구
A study on the growth of AlN single crystals
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초록
최근 관심이 높아지고 있는 GaN, SiC 단결정과 함께 자외선 LED 및 전력 반도체 용 기판 소재로서 응용성이높은 질화갈륨(AlN, Aluminum Nitride) 단결정을 성장하였다. 아직 상용화된 AlN 기판은 없지만, 단결정 성장에 대한 연구가 이루어지고 있다. 본 연구에서는 국내 최초로 AlN 단결정의 성장 결과 직경 약 8 mm의 결정을 성장하였다. 성장된 단결정은 광학현미경으로 관찰하였으며, DCXRD를 통하여 결정성을 평가한 결과를 보고하고자 한다.
Abstract
Recently, it has been interested much that AlN (Aluminum Nitride) crystals can be applied to UV LEDs and high power devices as like GaN and SiC crystals. The reports about commercial grade of AlN wafers in the world have been absent, however several results for growth of large size of AlN single crystals have been reported from abroad. In this report, the result of AlN single crystals of a diameter of about 8 mm grown are reported. Optical microscopic characterization was applied to observe the form of the crystals and the crystal quality was evaluated by FWHM measurement by DCXRD rocking curve analysis.
참고문헌 (6)
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