유도결합 열 플라즈마를 이용한 고순도 질화알루미늄 나노 분말 합성
Synthesis of high purity aluminum nitride nanopowder by RF induction thermal plasma
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초록
질화알루미늄(AlN)은 뛰어난 열적, 전기절연성 특성을 갖고 있어 반도체 기판용 재료나 전자 패키징 재료로 주목받고 있다. 질화알루미늄은 소결온도가 높고 불순물로 인한 물성저하 때문에 고순도화 및 나노원료화가 필수적이다. 본연구에서는 RF 유도결합 열플라즈마를 이용하여 알루미늄 분말로부터 고순도의 질화알루미늄 나노분말을 합성하였다. Sheath gas로 사용된 암모니아의 유량 제어를 통해 고순도의 질화알루미늄 나노분말이 합성되는 조건을 확립하고자 하였으며 합성된 분말은 XRD, SEM, TEM, BET, FTIR, N-O분석을 통해 특성분석을 진행하였다.
Abstract
Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity,has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitridehas a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesizehigh-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purityaluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow wascontrolled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitridenanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.
참고문헌 (27)
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