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Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth
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Numerical study of the influence of inlet shape design of a horizontal MOCVD reactor on the characteristics of epitaxial layer growth김소정, Soo-JinJeong한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제5호Susceptor design by numerical analysis in horizontal CVD reactor류진복, 배소익, 이정훈한국결정성장학회 · 한국결정성장학회지2005 · 제15권 제4호Growth of epitaxial silicon by hot-wall chemical vapor deposition (CVD) technique and its thermochemical analysisChinhoPark, DeoksunYoon, HongH.Lee, SeokkiYeo, WookhyunKoh한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제4호Influence on the growth temperature for one-dimensional nanostructures by halide vapor-phase epitaxy변윤기, 최성철, 한경섭청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제3호The effects of initial gas composition and pressure on the growth behavior of CVD SiC films최두진, Young-JinLee청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제3호Convective heat and mass transfer affected by aspect ratios for physical vapor transport crystal growth in two dimensional rectangular enclosures권무현, 김극태한국결정성장학회 · 한국결정성장학회지2018 · 제28권 제2호
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