Susceptor design by numerical analysis in horizontal CVD reactor
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Abstract
Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor, thereby, to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole #1 (240mm), hole #2 (150mm) and hole #3 (60mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness (5%) was obtained when using hole #1.
참고문헌 (13)
- "Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3-H2 system under atmospheric pressure", 169, pp.61~ (1996)
- "Hot-wall and cold-wall environments for silicon epitaxial film growth", 223, pp.145~ (2001)
- "Formation mechanism of local thickness profile of silicon epitaxial film", 266, pp.327~ (2004)
- "A theoretical", experimental study of silicon epitaxy in horizontal single-wafer chemical vapor deposition reactors, 2000, pp.147, 1538~
- "Muljti-component diffusion phenomena in multiple-wafer chemical vapour deposition reactors", 57, pp.127~ (1995)
- "A mathematical model of the hydrodynamics and gas-phase reactions in silicon LPCVD in a single-wafer reactor", 138, pp.2190~ (1991)
- "Three-dimensional flow effects in silicon CVD in horizontal reactors" (1988)
- "Numerical heat transfer and fluid flow" (1980)
- "Nonlinear increase in silicon epitaxial growth rate in a SiHCl3-H2 system under atmospheric pressure", 182, pp.352~ (1997)
- "Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy", 102, pp.441~ (1990)
- "Fundamentals of heat and mass transfer" (1996)
- "Properties of SILICON" (1988)
- "Chemical vapor deposition" (1993), ACADEMIC PRESS