화학증착법에 의한 티타늄 피복된 고속도강에의 다이아몬드 박막 형성
The formation of diamond films on high speed steel with a titanium interlayer by electron-assisted CVD process
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Abstract
The characteristics of interface layer and the effect of bias voltages on the nucleation density and hetroepitaxial growth of diamond films were studied in the hot filament CVD diamond process. Diamond films were deposited on a high speed steel (SKH-51) substrate by bias-assisted hot filament CVD technique with a titanium interlayer. The bias applied for enhancing the emission of electrons from the filament increased the nucleation density and achieving heteroepitaxial growth of CVD diamond. Diamond films obtained at a gas pressure of 20 torr; a bias voltage of 200 V and a substrate temperature of 700oC. Titanium was a suitable element as an interlayer for the diamond deposition on steel because it has high diffusivity of Fe and C as a carbide forming element.
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