Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace
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The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, 100~300 o C. BMD density with hot isostatic pressure treatment (HIP) at temperature of 850 o C is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.
Abstract
The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, 100~300 o C. BMD density with hot isostatic pressure treatment (HIP) at temperature of 850 o C is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.
참고문헌 (22)
- W. Lee, "Characterization of crystal- originated particles in silicon nitride doped, CZGrown silicon wafers", J. Electrochem. Soc, 153, pp.G248~ (2006)
- K. Matsukawa, "Gettering mechanism of transition metals in silicon calculated from first principles", Physica B, 376-377, pp.224~ (2006)
- H. Tsuya, "Present status and prospect of Si wafers for ultra large scale integration", Jpn. J. Appl. Phys, 43, pp.4055~ (2004)
- K. Honda, "Catastrophic breakdown in silicon oxides : The effect of Fe impurities at the SiO2—Si interface", J. Appl. Phys, 62, pp.1960~ (1987)
- H. Wendt, "Impact of copper contamination on the quality of silicon oxides", J. Appl. Phys, 65, pp.2402~ (1989)
- H. Goto, "Intrinsic gettering in nitrogen-doped and hydrogen-annealed Czochralski-grown silicon wafers", Jpn. J. Appl. Phys, 40, pp.3944~ (2001)
- D. Yang, "Impurity engineering of Czochralski silicon used for ultra largescaled-integrated circuits", J. Cryst. Growth, 311, pp.837~ (2009)
- T. Tan, "Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si", Appl. Phys. Lett, 30, pp.175~ (1977)
- R. Falster, "The gettering of transition metals by oxygen-related defects in silicon", J. Electrochem. Soc, 137, pp.1548~ (1990)
- B. Park, "Nitrogen-doping effect in a fast-pulled CZ-Si single crystal", J. Cryst. Growth, 222, pp.74~ (2001)
- K. Aihara, "Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping", J. Appl. Phys, 88, pp.3705~ (2000)
- V. Voronkov, "Nucleation of oxide precipitates in vacancy-containing silicon", J. Appl. Phys, 91, pp.5802~ (2002)
- R. Falster, "Vacancyassisted oxygen precipitation phenomena in Si", Solid State Phenom, 57-58, pp.129~ (1997)
- M. Jacob, "Observation of vacancy enhancement during rapid thermal annealing in nitrogen", Solid State Phenom, 57-58, pp.349~ (1997)
- V. Voronkov, "Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing", J. Appl. Phys, 114, pp.043520~ (2013)
- D. Zemke, "Investigations on the correlation between growth rate and gate oxide integrity of Czochralski-grown silicon", J. Gryst. Growth, 139, pp.37~ (1994)
- G. Graf, "Improvement of Czochralski siliconwafers by high-temperature annealing", J. Electrochem. Soc, 142, pp.3189~ (1995)
- J. Park, "DRAM wafer qualification issues: oxide integrity vs. D-defects, oxygen precipitates and high temperature annealing", Solid State Phenom, 47-48, pp.327~ (1996)
- J. Vanhellemont, "I mpact of oxygen related extended defects on silicon diode characteristics", J. Appl. Phys, 77, pp.5667~ (1995)
- G. Kissinger, "In vestigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography", ater. Sci. Eng. B, 36, pp.225~ (1996)
- H. Huff, "Some observations on oxygen precipitation", gettering in device processed Czochralski silicon, 1983, pp.130, 1551~
- G. Kissinger, "Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing", J. Electorhem. Soc, 146, pp.1971~ (1999)