The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed
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Among the various possible factors affecting the Minority Carrier Life Time (MCLT) of the mc-Si crystal,dislocations formed during the cooling period after solidification were found to be a major element. It was confirmed thatother defects such as grain boundary or twin boundary were not determinative defects affecting the MCLT because most ofthese defects seemed to be formed during the solidification period. With a measurement of total thickness variation (TTV)and bow of the silicon wafers, it was found that residual stress remaining in the mc-Si crystal might be another majorfactor affecting the MCLT. Thus, it is expected that better quality of mc-Si can be grown when the cooling process rightafter solidification is carried out as slow as possible.
Abstract
Among the various possible factors affecting the Minority Carrier Life Time (MCLT) of the mc-Si crystal,dislocations formed during the cooling period after solidification were found to be a major element. It was confirmed thatother defects such as grain boundary or twin boundary were not determinative defects affecting the MCLT because most ofthese defects seemed to be formed during the solidification period. With a measurement of total thickness variation (TTV)and bow of the silicon wafers, it was found that residual stress remaining in the mc-Si crystal might be another majorfactor affecting the MCLT. Thus, it is expected that better quality of mc-Si can be grown when the cooling process rightafter solidification is carried out as slow as possible.
참고문헌 (13)
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