The effect of rotation on the macro-steps formation during 4H-SiC solution growth
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New insights about macro-step formation has been investigated. The phenomena of surface instability caused bythe interaction between step flow and fluid flow was describe in mechanical way. The rotation of the seed crystal in aclockwise direction was applied with a speed varied from 30 to 200 rpm during the TSSG process on the Si- and C-faces4H-SiC. The macro-steps were formed along the two specific directions at different locations on the crystal for each, i.e.,[10-10] or [01-10] directions or both. From the results, it is suggested that the macro-steps were generated from the microstepsby interaction between step flow and fluid flow during the rotation of seed crystal. Furthermore, The fluid flow couldbe effective to control the micro- and/or macro-step behavior during solution growth.
Abstract
New insights about macro-step formation has been investigated. The phenomena of surface instability caused bythe interaction between step flow and fluid flow was describe in mechanical way. The rotation of the seed crystal in aclockwise direction was applied with a speed varied from 30 to 200 rpm during the TSSG process on the Si- and C-faces4H-SiC. The macro-steps were formed along the two specific directions at different locations on the crystal for each, i.e.,[10-10] or [01-10] directions or both. From the results, it is suggested that the macro-steps were generated from the microstepsby interaction between step flow and fluid flow during the rotation of seed crystal. Furthermore, The fluid flow couldbe effective to control the micro- and/or macro-step behavior during solution growth.
참고문헌 (9)
- D.H. Hofmann, "Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals", Mater. Sci. Eng, 61-62, pp.29~ (1999)
- K. Kamei, "Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution", Mater. Sci. Forum, 717-720, pp.45~ (2012)
- K. Kusunoki, "Top-seeded solution growth of three-inchdiameter 4H-SiC using convection control technique", J. Crys. Growth, 395, pp.68~ (2014)
- T. Kimoto, "Step bunching in chemical vapor deposition of 6H- and 4H-SiC on vicinal SiC(0001) faces", Appl. Phys. Lett, 66, pp.3645~ (1995)
- R.L. Schwoebel, "Step motion on crystal surfaces", J. Appl. Phys, 37, pp.3682~ (1966)
- Y. Yamamoto, "Stable growth of 4H-SiC single polytype by controlling the surface morphology using a temperature gradient in solution growth", Mater. Sci. Forum, 717-720, pp.53~ (2012)
- T. Ujihara, "Conversion mechanism of threading screw dislocation during SiC solution growth", Mater. Sci. Forum, 717-720, pp.351~ (2012)
- C. Zhu, "Influence of solution flow on step bunching in solution growth of SiC crystals", Cryst. Growth Des, 13, pp.3691~ (2013)
- T. Kimoto, "Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001}", J. Appl. Phys, 81, pp.3494~ (1997)