PVT 공법의 공정 변수가 고순도 반절연 SiC 단결정의 저항에 미치는 영향
The effect of PVT process parameters on the resistance of HPSI-SiC crystal
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초록
본 연구에서는 SiC(Silicon Carbide) 분말의 순도와 결정 성장 후 냉각 속도를 제어하여 PVT(Physical Vapor Transport) 방법으로 성장한 4인치 HPSI(High-Purity Semi-Insulating)-SiC 단결정의 저항 특성을 조사하였다 . 순도가 다른 2개의 β-SiC 분말을 사용하였고, 성장 후 냉각 속도를 조절하여 다양한 저항값을 얻었다. 성장된 결정의 투과 /흡수 스펙트럼 및 결정 품질은 각각 UV/VIs/NIR 분석과 XRD Rocking curve 분석을 이용하였으며, 비접촉 비저항 분석을 통해 전기적 특성을 조사하여 비저항 특성에 우세한 영향을 미치는 주요 요인을 확인하였다.
Abstract
In this study, the resistance characteristics of semi-insulating SiC single crystals grown using the PVT method were investigated, considering the purity level of SiC source powders used in PVT growth and the cooling procedure after crystal growth. Two β-SiC powders with different purities were employed, and the cooling rate after growth was adjusted to achieve various resistance values. 4-inch HPSI-SiC ingots were grown using the PVT method, utilizing SiC powderswith low nitrogen concentration and relatively high nitrogen concentration. These ingots were then subjected to different cooling procedures to modify the cooling rate. Transmission/absorption spectra and crystal quality of the grown crystals were analyzed through UV/VIs/NIR spectroscopy and X-ray rocking curve analysis, respectively. Additionally, electrical properties were investigated through non-contact resistivity analysis to identify the dominant factors influencing resistivity properties.
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