폭발물 감지 시스템 개발을 위한 TNT 분자 흡착에 대한 WSe2 소자의 전기적 반응 특성 평가
Electrical response of tungsten diselenide to the adsorption of trinitrotoluene molecules
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분자 단위의 폭발물질을 탐지하기 위하여, 고감도 응답성 센서의 개발이 요구되고있다. 2차원 반도체는얇은 적층형 구조를 가져 전하 캐리어가 축적될 수 있어, 전하 캐리어의 급격한 신호 변조 특성을 기대할 수 있다. WSe2 반도체 소재의 TNT(Trinitrotoluene) 폭발물질에 대한 탐지 효용성을 연구하기 위해, CVD(Chemical Vapor Deposition) 공정을 이용해 WSe2 박막을 합성하여 FET(Field Effect Transistors)을 제작하였다. 라만 분석과 FT-IR(Fourier-transform infrared) 분광 결과는 TNT 분자의 흡착과 WSe2 결정질의 구조적 전이 분석 정보를 나타내었다. 또한, WSe2 표면의 TNT 분자 흡착 전후의 전기적 특성을 비교하였다 . TNT 도포 전, WSe2 FET에 백 게이트 바이어스로 50 V를 인가함에 따라 0.02 A의 최대 전류값이 관측되었고, 0.6%(w/v) TNT 용액을 도포하였을 때 Drain 전류는 p-type 거동을 보이면서 0.41 A의 최대 전류 값을 기록하였다. 이후 On/Off Ratio 및 캐리어 이동도, 히스테리시스를 추가적으로 평가하였다. 본 연구에서는 WSe2의 TNT 분자에 대한 고감도와 신속한 응답성을 통해 폭발물질 탐지 센서 소재로서의 가능성을 제시하였다.
Abstract
As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsivesensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobilecarriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectivenessof WSe2 semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe2 was synthesized using thermal chemical vapor deposition, and afterward, WSe2 FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe2 crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe2 surface were compared; as 50 V was applied as the back gate bias, 0.02 A was recorded in the bare state, and the drain current increased to 0.41 A with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.
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