2인치 기판용 n-InP 결정 성장 및 기판소재의 특성 분석
n-InP crystal growth for 2 inch wafers and their characterization
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초록
인화 인듐 (Indium phosphide, InP)은 약 1.36 eV의 에너지 밴드갭 (bandgap)을 갖는 III-V족의 직접형(direct bandgap) 반도체이며, 광통신 대역의 1,550 nm 파장 등 근적외선 파장 대역의 광반도체 제조에 필요한 기판소재로서 매우 중요한 소재이다. 이러한 근적외선 파장영역은 자율주행 자동차용 라이다(LiDAR), 광통신 반도체 레이저, 의료용 반도체 레이저, 반도체 광검출기, 미사일 탑재 적외선 탐색기, 군사용 고출력 레이저 및 각종 센서 등에 광범위하게 응용되고 있다. 본 연구에서는 황(Sulfur, S)이 도핑된 n-형 반도체인 InP를 고압 수직 브리지만 방식(Vertical Bridgman Method, VB법)으로 성장시켰으며, 이를 2인치 기판형태로 절단하여 기판 위의 위치에 따라서 5개의 시료로 준비하여 특성분석을 수행하였다. 성장된 소재의 특성은 결정학적, 전기적, 광학적인 영역으로 나누어 분석을 수행하였다. X선 회절 분석(X-ray diffraction, XRD), 투과전자현미경(Transmission Electron Microscopy, TEM) 분석, 전위밀도(Etch Pit Density, EPD) 측정, 캐리어 농도 및 전기전도도, 전자이동도 분석, 가변 여기 파장 형광분석(Photoluminescence Excitation, PLE), 시간분해 형광분석(Time- resolved Photoluminescence, TR-PL) 등을 활용하여 해당 기판 소재의 특성 분석을 수행하였다. 성장된 n-InP 기판소재는 (100) 방향의 갖는 Zincblend 구조를 갖는 단결정으로 판단된다. 또한 캐리어 농도, 전기전도도, 전기이동도 등 전기적 특성은 우수한 편으로 분석되었다. 그러나 해외 기판소재와 비교해 볼 때, 측정된 EPD 값과 HR-XRD의 피크 값의 각도(2) 반치 폭이 상대적으로 크며, TR-PL에서 측정한 형광 수명이 상대적으로 짧다. 이는 본 성장 기판소재의 결정의 전위 밀도 등 상당한 양의 결함이 존재함을 의미하여 고품질 기판소재 제조를 위해서 성장 조건 최적화가 추가로 필요할 것으로 판단된다.
Abstract
Indium phosphide (InP) is a direct bandgap III-V semiconductor with the bandgap energy of approximately 1.36 eV, being used as a substrate semiconductor to fabricate optoelectronic devices at the near-infrared wavelengths such as 1,550 nm (telecommunication wavebands). Such optoelectronic devices include LiDAR for autonomous vehicles, semiconductor lasers, medical semiconductor lasers, photodetectors, infrared seekers for military missiles, military purpose high-power lasers, and various types of sensors. In this study, n-type InP doped with sulfur (S) was grown using the high-pressure Vertical Bridgman (VB) method for fabricating 2 inch wafers. We arranged the five specimens from five different positions on the wafer for characterization of various properties such as crystallographic, electrical, and optical one, via X-ray diffraction (XRD), transmission electron microscopy (TEM), etch pit density (EPD) estimation, Hall effects measurements, photoluminescence excitation (PLE) spectroscopy, and time-resolved photoluminescence (TR-PL). Characterization results indicated that the grown crystals could be approximately estimated as single crystals with Zincblende structure of (100) orientation and exhibited comparable or relatively good properties of electrical properties in comparison with n-InP single crystal wafers commercially available from overseas manufacturers. However, defects and crystalline impurity such as EPD were seen to be considerably higher than those of wafers of overseas manufacturers and needed to be minimized for improving n-InP single crystals. Given such defects, future works need to include the relevant optimization of growing conditions.
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