다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga₂O₃ 단결정의 다양한 결정면에 따른 특성 분석
Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure
1
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
β-Ga₂O₃는 ~4.8eV의 넓은 밴드 갭과 8MV/cm의 높은 항복 전압을 가지는 물질로 전력소자의 응용 분야에서 많은 주목을 받고 있다. 또한, 대표적인 WBG 반도체 소재인 SiC, GaN, 다이아몬드 등과 비교했을 때, 높은 성장률과 낮은 제조 비용으로 단결정 성장이 가능하다는 장점을 가진다 [1-4]. 본 연구에서는 다중 슬릿 구조를 이용한 EFG(Edge-defined Film-fed Growth) 법을 통해 SnO2 0.3 mol% 도핑된 10 mm 두께의 β-Ga₂O₃ 단결정을 성장시키는 데에 성공했다. 성장 방향과 성장 면은 각각 [010]/(001)로 설정하였으며 성장 속도는 약 12 mm/h이다 . 성장시킨 β-Ga₂O₃ 단결정은 다양한 결정면 (010, 001, 100, 201)으로 절단하여 표면 가공을 진행하였다. 가공이 완료된 샘플은 XRD, UV/VIS/NIR Spec., Mercury Probe, AFM, Etching 등의 분석을 통해 결정면에 따른 특성을 비교하였다. 본 연구는 고전압 및 고온 응용 분야에서 전력 반도체 기술의 발전에 기여할 것으로 기대되며 더 나은 특성의 기판을 선택하는 것은 소자의 성능과 신뢰성을 향상시키는 데에 중요한 역할을 할 것이다.
Abstract
β-Ga₂O₃ is a material with a wide band gap of ~4.8eV and a high breakdown-voltage of 8MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ singlecrystal doped with 0.3 mol% SnO2 through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, 201) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will playan important role in improving device performance and reliability.
참고문헌 (14)
- H. Xue, "An overview of the ultrawide bandgap Ga2O3 semiconductor-based schottky barrier diode for power electronics application", Nanoscale Res. Lett, 13, pp.1~ (2018)
- J. Y. Tsao, "Ultrawide-bandgap semiconductors : research opportunities and challenges", Adv. Electron. Mater, 4, pp.4~ (2018)
- M. Higashiwaki, "Guest Editorial : The dawn of gallium oxide microelectronics", Appl. Phys. Lett, 112, pp.2~ (2018)
- K. Zhang, "Temperature-dependent Raman and photoluminescence of β-Ga2O3 doped with shallow donors and deep acceptors impurities", J. Alloys and Compounds, 881, pp.1~ (2021)
- S. Zhang, "Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method", J. Semiconductors, 39, pp.2~ (2018)
- M. Higashiwaki, "Gallium oxide: Materials properties, crystal growth, and devices", pp.1~ (2020), Springer International Publishing
- A. Kuramata, "High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth", Jpn. J. Appl. Phys, 55, pp.5~ (2016)
- S. Bae, "Growth of various phases of gallium oxide", Enc. Appl. Phys, 12 (2021), WILEY-VCH GmbH
- A. Singh, "Intra-and inter-conduction band optical absorption processes in β-Ga2O3", Appl. Phys. Lett, 117, pp.1~ (2020)
- H. Peelaers, "Sub-band-gap absorption in Ga2O3", Appl. Phys. Lett, 111, pp.2~ (2017)
- K. Hanada, "Origins of etch pits in β-Ga2O3(010)single crystals", Jpn. J. Appl. Phys, 55, pp.3~ (2016)
- K. Ogawa, "AFM observation of etch-pit shapes on β-Ga2O3(001)surface formed by molten alkali etching", MSF, 1004, pp.3~ (2020)
- S. Sdoeung, "Characterization of dislocation of halide vapor phase epitaxial(001)β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes", Jpn. J. Appl. Phys, 62, pp.6~ (2023)
- T. Taishi, "Line-shaped defects in bulk β-Ga2O3 single crystals grown by the vertical Bridgman method", Jpn. J. Appl. Phys, 62, pp.3~ (2023)