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Improved luminescence properties of Na2TiSiO5 phosphor by the Ge4+ doping in the crystal lattice

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초록

Rare earth free white emitting Na2TiSi1−xGexO5 phosphors were synthesized by a conventional solid-state reaction method, and the photoluminescence properties were characterized. The phosphors obtained in the present study showed broad bluish-white emission with a peak at 485 nm due to the charge transfer transition between O2− and Ti4+ and the emission peak intensity was effectively enhanced by the Ge4+ doping in the Na2TiSiO5 crystal lattice. The emission peak intensity of Na2TiSi0.5Ge0.5O5 was 1.35 times higher than that of Na2TiSiO5 and the CIE chromaticity coordinate values for the phosphor were x = 0.29 and y = 0.38.

Abstract

Rare earth free white emitting Na2TiSi1−xGexO5 phosphors were synthesized by a conventional solid-state reaction method, and the photoluminescence properties were characterized. The phosphors obtained in the present study showed broad bluish-white emission with a peak at 485 nm due to the charge transfer transition between O2− and Ti4+ and the emission peak intensity was effectively enhanced by the Ge4+ doping in the Na2TiSiO5 crystal lattice. The emission peak intensity of Na2TiSi0.5Ge0.5O5 was 1.35 times higher than that of Na2TiSiO5 and the CIE chromaticity coordinate values for the phosphor were x = 0.29 and y = 0.38.

참고문헌 (24)

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