Analysis of morphological and electrical properties of optoelectronic devices with trimethoxy(proply)silane
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In this study, we investigated the deposition of trimethoxy(propyl)silane as a self-assembled monolayer (SAM) on the surfaceof an indium tin oxide (ITO) substrate in organic light-emitting diodes (OLEDs) by examining the changes in surfacecharacteristics of the modified substrate with variations in deposition time and temperature. The highest contact angle wasobtained at 160 oC, and for each deposition time, the contact angles were 63o, 66o, 80o, 96o, 103o, 103o, 103o, and 104o,respectively, indicating the contact angle, and thus the hydrophobicity, increased with increasing deposition time andtemperature. In addition, after 90 min of deposition, adequate SAM coverage was achieved on the ITO surface. When thecoverage ratio was calculated, ≥ 99% coverage was obtained after 90 min of deposition at 160 oC. Atomic force microscopyof samples with SAM coverage obtained after 90 min at different deposition tem-peratures revealed improvement in thesurface roughness of the fabricated samples. The work function, measured using a photoelectron spectrometer, demonstrateda characteristic increase with increasing temperature. Thus, SAM deposition can improve the ITO surface propertiesdepending on the time and temperature of deposition.
Abstract
In this study, we investigated the deposition of trimethoxy(propyl)silane as a self-assembled monolayer (SAM) on the surfaceof an indium tin oxide (ITO) substrate in organic light-emitting diodes (OLEDs) by examining the changes in surfacecharacteristics of the modified substrate with variations in deposition time and temperature. The highest contact angle wasobtained at 160 oC, and for each deposition time, the contact angles were 63o, 66o, 80o, 96o, 103o, 103o, 103o, and 104o,respectively, indicating the contact angle, and thus the hydrophobicity, increased with increasing deposition time andtemperature. In addition, after 90 min of deposition, adequate SAM coverage was achieved on the ITO surface. When thecoverage ratio was calculated, ≥ 99% coverage was obtained after 90 min of deposition at 160 oC. Atomic force microscopyof samples with SAM coverage obtained after 90 min at different deposition tem-peratures revealed improvement in thesurface roughness of the fabricated samples. The work function, measured using a photoelectron spectrometer, demonstrateda characteristic increase with increasing temperature. Thus, SAM deposition can improve the ITO surface propertiesdepending on the time and temperature of deposition.
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