8o-off (100) Si 기판위의 반극성을 가지는 (1-101) InGaN/GaN 다중양자우물 구조의 MOVPE 성장
Growth of semi-polar (1-101) InGaN/GaN MQW structures on 8o off -axis (100) patterned Si substrate by MOVPE
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초록
본 연구에서는 metal organic vapor phase epitaxy(MOVPE) 방법으로 8 o-off (100) Si 기판 위에 분극이 완화된 (1-101) GaN를 성장한 후 광소자로서의 가능성을 확인하고자 (1-101) GaN 위에 InGaN/GaN MQW 구조를 제작하였으며 암모니아 유량, TMI 유량 그리고 성장 온도 등 다양한 성장 조건에 따른 구조적, 광학적인 특성을 scanning electron microscopy(SEM)와 cathodoluminescence(CL) 을 통하여 관찰하였다. (1-101) GaN 성장시 암모니아 유량이 적을수록 관통전위가 현저히 줄어드는 것을 확인하였다. (1-101) GaN stripe 위에 성장 시킨 InGaN/GaN MQW 구조를 이용하여 성장조건에 따라서 391.5 nm부터 541.2 nm에 이르는 넓은 영역의 범위에서 발광 스펙트럼을 조절할 수 있음을 확인하였다.
Abstract
In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-101) GaN facet on 8-degree off oriented stripe patterned (100) Si substrates by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on NH3 flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of NH3 flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.
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